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Transistors(2488)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Input Type | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Configuration | FET Type | Test Condition | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Reverse Recovery Time (trr) | IGBT Type | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Pulsed (Icm) | Vce(on) (Max) @ Vge, Ic | Switching Energy | Td (on/off) @ 25°C | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
GT40QR21(STA1,E,D | 3.6200 |  |
18 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | GT40QR21 | Standard | 230 W | TO-3P(N) | download | ROHS3 Compliant | 1 (Unlimited) | 264-GT40QR21(STA1ED | EAR99 | 8541.29.0095 | 25 | 280V, 40A, 10Ohm, 20V | 600 ns | - | 1200 V | 40 A | 80 A | 2.7V @ 15V, 40A | -, 290µJ (off) | - | |||||||||||||||||||||
 |
TPW1500CNH,L1Q | 2.6600 | |
5 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C | Surface Mount | 8-PowerWDFN | MOSFET (Metal Oxide) | 8-DSOP Advance | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 150 V | 38A (Tc) | 10V | 15.4mOhm @ 19A, 10V | 4V @ 1mA | 22 nC @ 10 V | ±20V | 2200 pF @ 75 V | - | 800mW (Ta), 142W (Tc) | |||||||||||||||||||||||
|
SSM5N16FU,LF | 0.4500 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 5-TSSOP, SC-70-5, SOT-353 | SSM5N16 | MOSFET (Metal Oxide) | 200mW (Ta) | USV | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 2 N-Channel (Dual) | 20V | 100mA (Ta) | 3Ohm @ 10mA, 4V | 1.1V @ 100µA | - | 9.3pF @ 3V | - | |||||||||||||||||||||||
 |
SSM3J378R,LXHF | 0.5000 | |
24 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101, U-MOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | SOT-23-3 Flat Leads | MOSFET (Metal Oxide) | SOT-23F | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 20 V | 6A (Ta) | 1.5V, 4.5V | 29.8mOhm @ 3A, 4.5V | 1V @ 1mA | 12.8 nC @ 4.5 V | +6V, -8V | 840 pF @ 10 V | - | 1W (Ta) | ||||||||||||||||||||||
 |
2SA2060(TE12L,ZF) | - | |
9451 | 0.00000000 | Toshiba Semiconductor and Storage | - | Box | Active | 150°C (TJ) | Surface Mount | TO-243AA | 1 W | PW-MINI | download | EAR99 | 8541.29.0095 | 1 | 50 V | 2 A | 100nA (ICBO) | PNP | 200mV @ 33mA, 1A | 200 @ 300mA, 2V | - | ||||||||||||||||||||||||||||
 |
SSM3J145TU,LXHF | 0.3700 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101, U-MOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | 3-SMD, Flat Leads | MOSFET (Metal Oxide) | UFM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | P-Channel | 20 V | 3A (Ta) | 1.5V, 4.5V | 103mOhm @ 1A, 4.5V | 1V @ 1mA | 4.6 nC @ 4.5 V | +6V, -8V | 270 pF @ 10 V | - | 500mW (Ta) | |||||||||||||||||||||||
 |
SSM3K62TU,LXHF | 0.4000 | |
1 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101, U-MOSVII-H | Tape & Reel (TR) | Active | 150°C | Surface Mount | 3-SMD, Flat Lead | MOSFET (Metal Oxide) | UFM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 20 V | 800mA (Ta) | 1.2V, 4.5V | 57mOhm @ 800mA, 4.5V | 1V @ 1mA | 2 nC @ 4.5 V | ±8V | 177 pF @ 10 V | - | 500mW (Ta) | |||||||||||||||||||||||
 |
HN1B04FE-Y,LXHF | 0.4500 | |
8 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | HN1B04 | 100mW | ES6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 150mA | 100nA (ICBO) | NPN, PNP | 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA | 120 @ 2mA, 6V | 80MHz | ||||||||||||||||||||||||||
 |
RN1402,LXHF | 0.3400 | |
47 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN1402 | 200 mW | S-Mini | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 250 MHz | 10 kOhms | 10 kOhms | |||||||||||||||||||||||||
 |
RN2106,LXHF(CT | 0.3300 | |
5 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SC-75, SOT-416 | RN2106 | 100 mW | SSM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200 MHz | 4.7 kOhms | 47 kOhms | |||||||||||||||||||||||||
 |
HN1B04FU-GR,LXHF | 0.4200 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | - | Surface Mount | 6-TSSOP, SC-88, SOT-363 | HN1B04 | 200mW | US6 | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50V | 150mA | 100nA (ICBO) | NPN, PNP | 250mV @ 10mA, 100mA / 300mV @ 10mA, 100mA | 200 @ 2mA, 6V | 150MHz, 120MHz | ||||||||||||||||||||||||||
 |
RN2105MFV,L3XHF(CT | 0.3400 | |
8 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SOT-723 | RN2105 | 150 mW | VESM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 8,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 500µA, 5mA | 80 @ 10mA, 5V | 250 MHz | 2.2 kOhms | 47 kOhms | |||||||||||||||||||||||||
 |
RN2113,LF(CT | 0.2100 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-75, SOT-416 | RN2113 | 100 mW | SSM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 100nA (ICBO) | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 200 MHz | 47 kOhms | |||||||||||||||||||||||||
|
SSM3K131TU,LF | 0.5000 | |
11 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | 3-SMD, Flat Leads | SSM3K131 | MOSFET (Metal Oxide) | UFM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 30 V | 6A (Ta) | 4.5V, 10V | 27.6mOhm @ 4A, 10V | 2.5V @ 1mA | 10.1 nC @ 10 V | ±20V | 450 pF @ 15 V | - | 500mW (Ta) | |||||||||||||||||||||
 |
SSM6N40TU,LF | 0.4800 | |
18 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | SSM6N40 | MOSFET (Metal Oxide) | 500mW (Ta) | UF6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 2 N-Channel (Dual) | 30V | 1.6A (Ta) | 122mOhm @ 1A, 10V | 2.6V @ 1mA | 5.1nC @ 10V | 180pF @ 15V | Logic Level Gate, 4V Drive | |||||||||||||||||||||||
 |
TK3R3A06PL,S4X | 1.8000 | |
8105 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C | Through Hole | TO-220-3 Full Pack | TK3R3A06 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 60 V | 80A (Tc) | 4.5V, 10V | 3.3mOhm @ 40A, 10V | 2.5V @ 700µA | 71 nC @ 10 V | ±20V | 5000 pF @ 30 V | - | 42W (Tc) | |||||||||||||||||||||
|
TK2K2A60F,S4X | 0.9400 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C | Through Hole | TO-220-3 Full Pack | TK2K2A60 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 3.5A (Ta) | 10V | 2.2Ohm @ 1.8A, 10V | 4V @ 350µA | 13 nC @ 10 V | ±30V | 450 pF @ 300 V | - | 30W (Tc) | |||||||||||||||||||||
 |
TPH2R104PL,LQ | 1.1600 | |
8 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | TPH2R104 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 40 V | 100A (Tc) | 4.5V, 10V | 2.1mOhm @ 50A, 10V | 2.4V @ 500µA | 78 nC @ 10 V | ±20V | 6230 pF @ 20 V | - | 830mW (Ta), 116W (Tc) | ||||||||||||||||||||||
 |
TK49N65W,S1F | 11.1100 | |
83 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C | Through Hole | TO-247-3 | TK49N65 | MOSFET (Metal Oxide) | TO-247 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 650 V | 49.2A (Ta) | 10V | 55mOhm @ 24.6A, 10V | 3.5V @ 2.5mA | 160 nC @ 10 V | ±30V | 6500 pF @ 300 V | - | 400W (Tc) | |||||||||||||||||||||
|
TPH2R408QM,L1Q | 1.7000 | |
3476 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | TPH2R408 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 80 V | 120A (Tc) | 6V, 10V | 2.43mOhm @ 50A, 10V | 3.5V @ 1mA | 87 nC @ 10 V | ±20V | 8300 pF @ 40 V | - | 3W (Ta), 210W (Tc) | ||||||||||||||||||||||
 |
TK33S10N1L,LQ | 1.9000 | |
7785 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK33S10 | MOSFET (Metal Oxide) | DPAK+ | download | ROHS3 Compliant | 1 (Unlimited) | 264-TK33S10N1LLQCT | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 100 V | 33A (Ta) | 4.5V, 10V | 9.7mOhm @ 16.5A, 10V | 2.5V @ 500µA | 33 nC @ 10 V | ±20V | 2250 pF @ 10 V | - | 125W (Tc) | ||||||||||||||||||||
|
TPCP8107,LF | 0.7200 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-SMD, Flat Lead | TPCP8107 | MOSFET (Metal Oxide) | PS-8 | - | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 40 V | 8A (Ta) | 6V, 10V | 18mOhm @ 4A, 10V | 3V @ 1mA | 44.6 nC @ 10 V | +10V, -20V | 2160 pF @ 10 V | - | 1W (Ta) | ||||||||||||||||||||||
|
TJ15S06M3L,LXHQ | 0.9500 | |
16 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TJ15S06 | MOSFET (Metal Oxide) | DPAK+ | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | P-Channel | 60 V | 15A (Ta) | 6V, 10V | 50mOhm @ 7.5A, 10V | 3V @ 1mA | 36 nC @ 10 V | +10V, -20V | 1770 pF @ 10 V | - | 41W (Tc) | ||||||||||||||||||||||
 |
XK1R9F10QB,LXGQ | 3.9000 | |
4008 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | XK1R9F10 | MOSFET (Metal Oxide) | TO-220SM(W) | download | 3 (168 Hours) | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 100 V | 160A (Ta) | 6V, 10V | 1.92mOhm @ 80A, 10V | 3.5V @ 1mA | 184 nC @ 10 V | ±20V | 11500 pF @ 10 V | - | 375W (Tc) | ||||||||||||||||||||||
|
TPHR7904PB,L1XHQ | 2.8200 | |
19 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-SOIC (0.197", 5.00mm Width) | TPHR7904 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 5,000 | N-Channel | 40 V | 150A (Ta) | 6V, 10V | 0.79mOhm @ 75A, 10V | 3V @ 1mA | 85 nC @ 10 V | ±20V | 6650 pF @ 10 V | - | 960mW (Ta), 170W (Tc) | ||||||||||||||||||||||
 |
TK25S06N1L,LXHQ | 0.9300 | |
3804 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK25S06 | MOSFET (Metal Oxide) | DPAK+ | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 60 V | 25A (Ta) | 4.5V, 10V | 36.8mOhm @ 12.5A, 4.5V | 2.5V @ 100µA | 15 nC @ 10 V | ±20V | 855 pF @ 10 V | - | 57W (Tc) | ||||||||||||||||||||||
 |
TK33S10N1Z,LXHQ | 1.4200 | |
8142 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK33S10 | MOSFET (Metal Oxide) | DPAK+ | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 100 V | 33A (Ta) | 10V | 9.7mOhm @ 16.5A, 10V | 4V @ 500µA | 28 nC @ 10 V | ±20V | 2050 pF @ 10 V | - | 125W (Tc) | ||||||||||||||||||||||
|
SSM10N961L,ELF | 0.8700 | |
9155 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 10-XFLGA, CSP | MOSFET (Metal Oxide) | 880mW (Ta) | TCSPAG-341501 | - | ROHS3 Compliant | 1 (Unlimited) | 10,000 | 2 N-Channel (Half Bridge) | 30V | 9A (Ta) | 2.3V @ 250µA | 17.3nC @ 10V | - | - | |||||||||||||||||||||||||||
|
RN1112(TE85L,F) | 0.2200 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-75, SOT-416 | RN1112 | 100 mW | SSM | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 100nA (ICBO) | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 250 MHz | 22 kOhms | ||||||||||||||||||||||||||
|
TW060Z120C,S1F | 17.8200 | |
7048 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C | Through Hole | TO-247-4 | SiC (Silicon Carbide Junction Transistor) | TO-247-4L(X) | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 1200 V | 36A (Tc) | 18V | 82mOhm @ 18A, 18V | 5V @ 4.2mA | 46 nC @ 18 V | +25V, -10V | 1530 pF @ 800 V | - | 170W (Tc) |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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