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Discrete Semiconductor Products(2909)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | ECCN | HTSUS | Standard Package | Configuration | Speed | FET Type | Current - Max | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Capacitance @ Vr, F | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Diode Type | Voltage - Peak Reverse (Max) | Current - Drain (Idss) @ Vds (Vgs=0) | Voltage - Cutoff (VGS off) @ Id | Current - Collector Cutoff (Max) | Resistance @ If, F | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2SA1428-O,T2WNLF(J | - |  |
6056 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | SC-71 | 2SA1428 | 900 mW | MSTM | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 50 V | 2 A | 1µA (ICBO) | PNP | 500mV @ 50mA, 1A | 70 @ 500mA, 2V | 100MHz | ||||||||||||||||||||||||||||||||
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2SA1020-Y,HOF(M | - | |
4288 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SA1020 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 50 V | 2 A | 1µA (ICBO) | PNP | 500mV @ 50mA, 1A | 70 @ 500mA, 2V | 100MHz | ||||||||||||||||||||||||||||||||
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RN2905FE,LXHF(CT | 0.3800 | |
8 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN2905 | 100mW | ES6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 500nA | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200MHz | 2.2kOhms | 47kOhms | |||||||||||||||||||||||||||||||
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RN1112CT(TPL3) | - | |
9061 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SC-101, SOT-883 | RN1112 | 50 mW | CST3 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 10,000 | 20 V | 50 mA | 100nA (ICBO) | NPN - Pre-Biased | 150mV @ 250µA, 5mA | 300 @ 1mA, 5V | 22 kOhms | |||||||||||||||||||||||||||||||||
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RN2902,LF | - | |
7224 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN2902 | 200mW | US6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 500nA | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 200MHz | 10kOhms | 10kOhms | |||||||||||||||||||||||||||||||
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2SK3670,F(J | - | |
2775 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | Through Hole | TO-226-3, TO-92-3 Long Body | 2SK3670 | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 1 | 670mA (Tj) | ||||||||||||||||||||||||||||||||||||||||
 |
TK380A65Y,S4X | 1.8300 | |
95 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C | Through Hole | TO-220-3 Full Pack | TK380A65 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 9.7A (Tc) | 10V | 380mOhm @ 4.9A, 10V | 4V @ 360µA | 20 nC @ 10 V | ±30V | 590 pF @ 300 V | - | 30W (Tc) | |||||||||||||||||||||||||||
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2SK2845(TE16L1,Q) | - | |
5146 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2SK2845 | MOSFET (Metal Oxide) | PW-MOLD | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 900 V | 1A (Ta) | 10V | 9Ohm @ 500mA, 10V | 4V @ 1mA | 15 nC @ 10 V | ±30V | 350 pF @ 25 V | - | 40W (Tc) | ||||||||||||||||||||||||||||
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TK60P03M1,RQ(S | - | |
6408 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK60P03 | MOSFET (Metal Oxide) | DPAK | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 30 V | 60A (Ta) | 4.5V, 10V | 6.4mOhm @ 30A, 10V | 2.3V @ 500µA | 40 nC @ 10 V | ±20V | 2700 pF @ 10 V | - | 63W (Tc) | |||||||||||||||||||||||||||
|
SSM6P35FE(TE85L,F) | 0.4400 | |
4 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SSM6P35 | MOSFET (Metal Oxide) | 150mW | ES6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 2 P-Channel (Dual) | 20V | 100mA | 8Ohm @ 50mA, 4V | 1V @ 1mA | - | 12.2pF @ 3V | Logic Level Gate | |||||||||||||||||||||||||||||
 |
TK40E10N1,S1X | 1.9900 | |
3520 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 | TK40E10 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 100 V | 90A (Tc) | 10V | 8.2mOhm @ 20A, 10V | 4V @ 500µA | 49 nC @ 10 V | ±20V | 3000 pF @ 50 V | - | 126W (Tc) | |||||||||||||||||||||||||||
|
RN2904,LF(CT | 0.2800 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN2904 | 200mW | US6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 500nA | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200MHz | 47kOhms | 47kOhms | ||||||||||||||||||||||||||||||
 |
TK15A50D(STA4,Q,M) | 3.2300 | |
29 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK15A50 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 500 V | 15A (Ta) | 10V | 300mOhm @ 7.5A, 10V | 4V @ 1mA | 40 nC @ 10 V | ±30V | 2300 pF @ 25 V | - | 50W (Tc) | |||||||||||||||||||||||||||
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TDTC143Z,LM | 0.1800 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TDTC143 | 320 mW | SOT-23-3 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 500µA, 10mA | 80 @ 10mA, 5V | 250 MHz | 4.7 kOhms | |||||||||||||||||||||||||||||||
 |
1SS302A,LF | 0.2200 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-70, SOT-323 | 1SS302 | Standard | SC-70 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Small Signal =< 200mA (Io), Any Speed | 1 Pair Series Connection | 80 V | 100mA | 1.2 V @ 100 mA | 4 ns | 500 nA @ 80 V | -55°C ~ 150°C | |||||||||||||||||||||||||||||||
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TK6Q65W,S1Q | 1.4000 | |
8899 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | TK6Q65 | MOSFET (Metal Oxide) | I-Pak | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 75 | N-Channel | 650 V | 5.8A (Ta) | 10V | 1.05Ohm @ 2.9A, 10V | 3.5V @ 180µA | 11 nC @ 10 V | ±30V | 390 pF @ 300 V | - | 60W (Tc) | |||||||||||||||||||||||||||
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TK8A10K3,S5Q | - | |
5357 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIV | Tube | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK8A10 | MOSFET (Metal Oxide) | TO-220SIS | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 100 V | 8A (Ta) | 10V | 120mOhm @ 4A, 10V | 4V @ 1mA | 12.9 nC @ 10 V | ±20V | 530 pF @ 10 V | - | 18W (Tc) | |||||||||||||||||||||||||||
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2SB1495,Q(J | - | |
9035 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SB1495 | 2 W | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1 | 100 V | 3 A | 10µA (ICBO) | PNP | 1.5V @ 1.5mA, 1.5A | 2000 @ 2A, 2V | - | ||||||||||||||||||||||||||||||||
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RN2109CT(TPL3) | - | |
8190 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SC-101, SOT-883 | RN2109 | 50 mW | CST3 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 10,000 | 20 V | 50 mA | 500nA | PNP - Pre-Biased | 150mV @ 250µA, 5mA | 100 @ 10mA, 5V | 47 kOhms | 22 kOhms | ||||||||||||||||||||||||||||||||
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2SD2695,T6F(J | - | |
2957 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SD2695 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 60 V | 2 A | 10µA (ICBO) | NPN | 1.5V @ 1mA, 1A | 2000 @ 1A, 2V | 100MHz | ||||||||||||||||||||||||||||||||
 |
1SS381,L3F | 0.0540 | |
6469 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Not For New Designs | 125°C (TJ) | SC-79, SOD-523 | 1SS381 | ESC | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 8,000 | 100 mA | 1.2pF @ 6V, 1MHz | PIN - Single | 30V | 900mOhm @ 2mA, 100MHz | |||||||||||||||||||||||||||||||||||
|
RN2301,LXHF | 0.3900 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SC-70, SOT-323 | RN2301 | 100 mW | SC-70 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 30 @ 10mA, 5V | 200 MHz | 4.7 kOhms | 4.7 kOhms | |||||||||||||||||||||||||||||||
 |
2SK3320-BL(TE85L,F | 0.7500 | |
72 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | 5-TSSOP, SC-70-5, SOT-353 | 2SK3320 | 200 mW | USV | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 13pF @ 10V | 6 mA @ 10 V | 200 mV @ 100 nA | ||||||||||||||||||||||||||||||||||
 |
TK125V65Z,LQ | 4.9000 | |
7993 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | 4-VSFN Exposed Pad | TK125V65 | MOSFET (Metal Oxide) | 4-DFN-EP (8x8) | download | ROHS3 Compliant | 3 (168 Hours) | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 650 V | 24A (Ta) | 10V | 125mOhm @ 12A, 10V | 4V @ 1.02mA | 40 nC @ 10 V | ±30V | 2250 pF @ 300 V | - | 190W (Tc) | |||||||||||||||||||||||||||
 |
TK16N60W,S1VF | 4.1900 | |
7281 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-247-3 | TK16N60 | MOSFET (Metal Oxide) | TO-247 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 600 V | 15.8A (Ta) | 10V | 190mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38 nC @ 10 V | ±30V | 1350 pF @ 300 V | - | 130W (Tc) | |||||||||||||||||||||||||||
|
RN1965FE(TE85L,F) | 0.1000 | |
20 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SOT-563, SOT-666 | RN1965 | 100mW | ES6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 100nA (ICBO) | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250MHz | 2.2kOhms | 47kOhms | |||||||||||||||||||||||||||||||
|
TK20P04M1,RQ(S | - | |
3613 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK20P04 | MOSFET (Metal Oxide) | DPAK | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 40 V | 20A (Ta) | 4.5V, 10V | 29mOhm @ 10A, 10V | 2.3V @ 100µA | 15 nC @ 10 V | ±20V | 985 pF @ 10 V | - | 27W (Tc) | |||||||||||||||||||||||||||
|
TK34A10N1,S4X | 1.5500 | |
9909 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK34A10 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 100 V | 34A (Tc) | 10V | 9.5mOhm @ 17A, 10V | 4V @ 500µA | 38 nC @ 10 V | ±20V | 2600 pF @ 50 V | - | 35W (Tc) | |||||||||||||||||||||||||||
 |
RN1401,LXHF | 0.3400 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN1401 | 200 mW | S-Mini | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 30 @ 10mA, 5V | 250 MHz | 4.7 kOhms | 4.7 kOhms | |||||||||||||||||||||||||||||||
|
TK35N65W5,S1F | 9.0900 | |
7466 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-247-3 | TK35N65 | MOSFET (Metal Oxide) | TO-247 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 650 V | 35A (Ta) | 10V | 95mOhm @ 17.5A, 10V | 4.5V @ 2.1mA | 115 nC @ 10 V | ±30V | 4100 pF @ 300 V | - | 270W (Tc) |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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