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Discrete Semiconductor Products(2909)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Tolerance | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Configuration | Speed | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Voltage - Breakdown (V(BR)GSS) | Current - Drain (Idss) @ Vds (Vgs=0) | Voltage - Cutoff (VGS off) @ Id | Current - Collector Cutoff (Max) | Voltage - Zener (Nom) (Vz) | Impedance (Max) (Zzt) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) | Current Drain (Id) - Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
TK65A10N1,S4X | 2.7900 |  |
41 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK65A10 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 100 V | 65A (Tc) | 10V | 4.8mOhm @ 32.5A, 10V | 4V @ 1mA | 81 nC @ 10 V | ±20V | 5400 pF @ 50 V | - | 45W (Tc) | |||||||||||||||||||||||||||
 |
RN1910,LXHF(CT | 0.3600 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN1910 | 200mW | US6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100nA (ICBO) | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 250MHz | 4.7kOhms | - | |||||||||||||||||||||||||||||||
 |
RN1609(TE85L,F) | 0.4800 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-74, SOT-457 | RN1609 | 300mW | SM6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100nA (ICBO) | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 70 @ 10mA, 5V | 250MHz | 47kOhms | 22kOhms | ||||||||||||||||||||||||||||||
 |
CRY68(TE85L,Q,M) | 0.4900 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | ±10% | -40°C ~ 150°C | Surface Mount | SOD-123F | CRY68 | 700 mW | S-FLAT (1.6x3.5) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0050 | 3,000 | 1 V @ 200 mA | 10 µA @ 3 V | 6.8 V | 60 Ohms | |||||||||||||||||||||||||||||||||
 |
TK3A60DA(STA4,Q,M) | 1.2100 | |
50 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK3A60 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 2.5A (Ta) | 10V | 2.8Ohm @ 1.3A, 10V | 4.4V @ 1mA | 9 nC @ 10 V | ±30V | 380 pF @ 25 V | - | 30W (Tc) | |||||||||||||||||||||||||||
 |
SSM6N36TU,LF | 0.3800 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | SSM6N36 | MOSFET (Metal Oxide) | 500mW (Ta) | UF6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 2 N-Channel (Dual) | 20V | 500mA (Ta) | 630mOhm @ 200mA, 5V | 1V @ 1mA | 1.23nC @ 4V | 46pF @ 10V | Logic Level Gate, 1.5V Drive | |||||||||||||||||||||||||||||
 |
TPCC8002-H(TE12L,Q | - | |
2822 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSV-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | TPCC8002 | MOSFET (Metal Oxide) | 8-TSON Advance (3.3x3.3) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 22A (Ta) | 4.5V, 10V | 8.3mOhm @ 11A, 10V | 2.5V @ 1mA | 27 nC @ 10 V | ±20V | 2500 pF @ 10 V | - | 700mW (Ta), 30W (Tc) | ||||||||||||||||||||||||||||
 |
2SA2154MFV-GR(TPL3 | - | |
6607 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SOT-723 | 2SA2154 | 150 mW | VESM | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 8,000 | 50 V | 150 mA | 100nA (ICBO) | PNP | 300mV @ 10mA, 100mA | 200 @ 2mA, 6V | 80MHz | |||||||||||||||||||||||||||||||
 |
SSM6K818R,LF | 0.7000 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | SSM6K818 | MOSFET (Metal Oxide) | 6-TSOP-F | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 15A (Ta) | 4.5V, 10V | 12mOhm @ 4A, 4.5V | 2.1V @ 100µA | 7.5 nC @ 4.5 V | ±20V | 1130 pF @ 15 V | - | 1.5W (Ta) | |||||||||||||||||||||||||||
|
TK40A10N1,S4X | 1.8500 | |
100 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK40A10 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 100 V | 40A (Tc) | 10V | 8.2mOhm @ 20A, 10V | 4V @ 500µA | 49 nC @ 10 V | ±20V | 3000 pF @ 50 V | - | 35W (Tc) | |||||||||||||||||||||||||||
 |
TPN2010FNH,L1Q | 1.5500 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPN2010 | MOSFET (Metal Oxide) | 8-TSON Advance (3.1x3.1) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 250 V | 5.6A (Ta) | 10V | 198mOhm @ 2.8A, 10V | 4V @ 200µA | 7 nC @ 10 V | ±20V | 600 pF @ 100 V | - | 700mW (Ta), 39W (Tc) | |||||||||||||||||||||||||||
 |
2SD2257,KEHINQ(J | - | |
4854 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SD2257 | 2 W | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1 | 100 V | 3 A | 10µA (ICBO) | NPN | 1.5V @ 1.5mA, 1.5A | 2000 @ 2A, 2V | - | ||||||||||||||||||||||||||||||||
|
TK100A08N1,S4X | 3.7500 | |
2898 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK100A08 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | Not Applicable | EAR99 | 8541.29.0095 | 50 | N-Channel | 80 V | 100A (Tc) | 10V | 3.2mOhm @ 50A, 10V | 4V @ 1mA | 130 nC @ 10 V | ±20V | 9000 pF @ 40 V | - | 45W (Tc) | |||||||||||||||||||||||||||
 |
2SC4116-BL,LF | 0.1800 | |
982 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | SC-70, SOT-323 | 2SC4116 | 100 mW | SC-70 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 150 mA | 100nA (ICBO) | NPN | 250mV @ 10mA, 100mA | 350 @ 2mA, 6V | 80MHz | |||||||||||||||||||||||||||||||
 |
RN1413(TE85L,F) | 0.2900 | |
115 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN1413 | 200 mW | S-Mini | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 100nA (ICBO) | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 250 MHz | 47 kOhms | |||||||||||||||||||||||||||||||
|
2SA1588-O,LF | 0.0478 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | SC-70, SOT-323 | 2SA1588 | 100 mW | SC-70 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 30 V | 500 mA | 100nA (ICBO) | PNP | 250mV @ 10mA, 100mA | 70 @ 100mA, 1V | 200MHz | |||||||||||||||||||||||||||||||
|
TK3A65DA(STA4,QM) | 1.5200 | |
4118 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK3A65 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 2.5A (Ta) | 10V | 2.51Ohm @ 1.3A, 10V | 4.4V @ 1mA | 11 nC @ 10 V | ±30V | 490 pF @ 25 V | - | 35W (Tc) | |||||||||||||||||||||||||||
 |
SSM6K514NU,LF | 0.4700 | |
47 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-WDFN Exposed Pad | SSM6K514 | MOSFET (Metal Oxide) | 6-UDFNB (2x2) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 40 V | 12A (Ta) | 4.5V, 10V | 11.6mOhm @ 4A, 10V | 2.4V @ 100µA | 7.5 nC @ 4.5 V | ±20V | 1110 pF @ 20 V | - | 2.5W (Ta) | |||||||||||||||||||||||||||
|
2SK3566(STA4,Q,M) | 1.6700 | |
955 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SK3566 | MOSFET (Metal Oxide) | TO-220SIS | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 900 V | 2.5A (Ta) | 10V | 6.4Ohm @ 1.5A, 10V | 4V @ 1mA | 12 nC @ 10 V | ±30V | 470 pF @ 25 V | - | 40W (Tc) | |||||||||||||||||||||||||||
 |
TPC8405(TE12L,Q,M) | - | |
3778 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | TPC8405 | MOSFET (Metal Oxide) | 450mW | 8-SOP (5.5x6.0) | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N and P-Channel | 30V | 6A, 4.5A | 26mOhm @ 3A, 10V | 2V @ 1mA | 27nC @ 10V | 1240pF @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||
 |
2SC5200N(S1,E,S) | 2.2100 | |
3081 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | 2SC5200 | 150 W | TO-3P(N) | download | ROHS3 Compliant | Not Applicable | 2SC5200N(S1ES) | EAR99 | 8541.29.0075 | 25 | 230 V | 15 A | 5µA (ICBO) | NPN | 3V @ 800mA, 8A | 80 @ 1A, 5V | 30MHz | ||||||||||||||||||||||||||||||
 |
2SK208-R(TE85L,F) | 0.4900 | |
36 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 2SK208 | 100 mW | S-Mini | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 8.2pF @ 10V | 50 V | 300 µA @ 10 V | 400 mV @ 100 nA | 6.5 mA | ||||||||||||||||||||||||||||||||
 |
RN1962FE(TE85L,F) | 0.1500 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SOT-563, SOT-666 | RN1962 | 100mW | ES6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 100nA (ICBO) | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 250MHz | 10kOhms | 10kOhms | |||||||||||||||||||||||||||||||
 |
SSM3K36FS,LF | 0.2900 | |
31 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIII | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SC-75, SOT-416 | SSM3K36 | MOSFET (Metal Oxide) | SSM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 20 V | 500mA (Ta) | 1.5V, 5V | 630mOhm @ 200mA, 5V | 1V @ 1mA | 1.23 nC @ 4 V | ±10V | 46 pF @ 10 V | - | 150mW (Ta) | |||||||||||||||||||||||||||
|
RN2102,LF(CT | 0.2000 | |
8558 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-75, SOT-416 | RN2102 | 100 mW | SSM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 200 MHz | 10 kOhms | 10 kOhms | ||||||||||||||||||||||||||||||
|
RN1107MFV,L3XHF(CT | 0.3400 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SOT-723 | RN1107 | 150 mW | VESM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 8,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 500µA, 5mA | 80 @ 10mA, 5V | 10 kOhms | 47 kOhms | ||||||||||||||||||||||||||||||||
 |
2SA1020-Y,F(J | - | |
8744 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SA1020 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 50 V | 2 A | 1µA (ICBO) | PNP | 500mV @ 50mA, 1A | 70 @ 500mA, 2V | 100MHz | ||||||||||||||||||||||||||||||||
|
SSM6N15AFU,LF | 0.3500 | |
39 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SSM6N15 | MOSFET (Metal Oxide) | 300mW | US6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 2 N-Channel (Dual) | 30V | 100mA | 3.6Ohm @ 10mA, 4V | 1.5V @ 100µA | - | 13.5pF @ 3V | Logic Level Gate | |||||||||||||||||||||||||||||
|
2SA965-Y(T6CANO,FM | - | |
3779 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SA965 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 120 V | 800 mA | 100nA (ICBO) | PNP | 1V @ 50mA, 500mA | 80 @ 100mA, 5V | 120MHz | ||||||||||||||||||||||||||||||||
 |
1SS424(TPL3,F) | 0.2200 | |
62 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-79, SOD-523 | 1SS424 | Schottky | ESC | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 8,000 | Small Signal =< 200mA (Io), Any Speed | 20 V | 500 mV @ 200 mA | 50 µA @ 20 V | 125°C (Max) | 200mA | 20pF @ 0V, 1MHz |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
Wishlist (0 Items) 