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Discrete Semiconductor Products(2909)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Input Type | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Configuration | FET Type | Test Condition | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Reverse Recovery Time (trr) | Capacitance @ Vr, F | IGBT Type | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Pulsed (Icm) | Vce(on) (Max) @ Vge, Ic | Switching Energy | Gate Charge | Td (on/off) @ 25°C | Diode Type | Voltage - Peak Reverse (Max) | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) | Noise Figure (dB Typ @ f) | Capacitance Ratio | Capacitance Ratio Condition | Q @ Vr, F |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
TK2R9E10PL,S1X | 2.9000 |  |
9020 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tube | Active | 175°C | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 100 V | 100A (Ta) | 4.5V, 10V | 2.9mOhm @ 50A, 10V | 2.5V @ 1mA | 161 nC @ 10 V | ±20V | 9500 pF @ 50 V | - | 306W (Tc) | |||||||||||||||||||||||||||||||
|
TK5A90E,S4X | 1.4600 | |
9249 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 900 V | 4.5A (Ta) | 10V | 3.1Ohm @ 2.3A, 10V | 4V @ 450µA | 20 nC @ 10 V | ±30V | 950 pF @ 25 V | - | 40W (Tc) | |||||||||||||||||||||||||||||||
|
TPH5R60APL,L1Q | 1.3600 | |
3472 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 100 V | 60A (Tc) | 4.5V, 10V | 5.6mOhm @ 30A, 10V | 2.5V @ 500µA | 52 nC @ 10 V | ±20V | 4300 pF @ 50 V | - | 960mW (Ta), 132W (Tc) | ||||||||||||||||||||||||||||||||
 |
SSM3J118TU,LF | 0.4800 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 3-SMD, Flat Leads | MOSFET (Metal Oxide) | UFM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | P-Channel | 30 V | 1.4A (Ta) | 4V, 10V | 240mOhm @ 650mA, 10V | 2.6V @ 1mA | ±20V | 137 pF @ 15 V | - | 500mW (Ta) | ||||||||||||||||||||||||||||||||
 |
SSM6N813R,LF | 0.5500 | |
8 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | 175°C | Surface Mount | 6-SMD, Flat Leads | SSM6N813 | MOSFET (Metal Oxide) | 1.5W (Ta) | 6-TSOP-F | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | 2 N-Channel (Dual) | 100V | 3.5A (Ta) | 112mOhm @ 3.5A, 10V | 2.5V @ 100µA | 3.6nC @ 4.5V | 242pF @ 15V | - | ||||||||||||||||||||||||||||||||
|
TK13P25D,RQ | 0.9000 | |
1 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | MOSFET (Metal Oxide) | DPAK | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 250 V | 13A (Ta) | 10V | 250mOhm @ 6.5A, 10V | 3.5V @ 1mA | 25 nC @ 10 V | ±20V | 1100 pF @ 100 V | - | 96W (Tc) | |||||||||||||||||||||||||||||||
 |
GT40QR21(STA1,E,D | 3.6200 | |
18 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | GT40QR21 | Standard | 230 W | TO-3P(N) | download | ROHS3 Compliant | 1 (Unlimited) | 264-GT40QR21(STA1ED | EAR99 | 8541.29.0095 | 25 | 280V, 40A, 10Ohm, 20V | 600 ns | - | 1200 V | 40 A | 80 A | 2.7V @ 15V, 40A | -, 290µJ (off) | - | ||||||||||||||||||||||||||||||
|
TPW1500CNH,L1Q | 2.6600 | |
5 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C | Surface Mount | 8-PowerWDFN | MOSFET (Metal Oxide) | 8-DSOP Advance | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 150 V | 38A (Tc) | 10V | 15.4mOhm @ 19A, 10V | 4V @ 1mA | 22 nC @ 10 V | ±20V | 2200 pF @ 75 V | - | 800mW (Ta), 142W (Tc) | ||||||||||||||||||||||||||||||||
 |
TW015N65C,S1F | 55.4500 | |
114 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C | Through Hole | TO-247-3 | SiCFET (Silicon Carbide) | TO-247 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 650 V | 100A (Tc) | 18V | 21mOhm @ 50A, 18V | 5V @ 11.7mA | 128 nC @ 18 V | +25V, -10V | 4850 pF @ 400 V | - | 342W (Tc) | |||||||||||||||||||||||||||||||
|
GT30J65MRB,S1E | 2.5800 | |
74 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | GT30J65 | Standard | 200 W | TO-3P(N) | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 25 | 400V, 15A, 56Ohm, 15V | 200 ns | - | 650 V | 60 A | 1.8V @ 15V, 30A | 1.4mJ (on), 220µJ (off) | 70 nC | 75ns/400ns | |||||||||||||||||||||||||||||||
 |
TK3P50D,RQ(S | 1.1700 | |
6966 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK3P50 | MOSFET (Metal Oxide) | DPAK | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 500 V | 3A (Ta) | 10V | 3Ohm @ 1.5A, 10V | 4.4V @ 1mA | 7 nC @ 10 V | ±30V | 280 pF @ 25 V | - | 60W (Tc) | ||||||||||||||||||||||||||||||
 |
TK8S06K3L(T6L1,NQ) | 1.2600 | |
4739 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIV | Tape & Reel (TR) | Active | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK8S06 | MOSFET (Metal Oxide) | DPAK+ | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 60 V | 8A (Ta) | 6V, 10V | 54mOhm @ 4A, 10V | 3V @ 1mA | 10 nC @ 10 V | ±20V | 400 pF @ 10 V | - | 25W (Tc) | ||||||||||||||||||||||||||||||
 |
SSM3J378R,LXHF | 0.5000 | |
24 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101, U-MOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | SOT-23-3 Flat Leads | MOSFET (Metal Oxide) | SOT-23F | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 20 V | 6A (Ta) | 1.5V, 4.5V | 29.8mOhm @ 3A, 4.5V | 1V @ 1mA | 12.8 nC @ 4.5 V | +6V, -8V | 840 pF @ 10 V | - | 1W (Ta) | |||||||||||||||||||||||||||||||
 |
SSM6N37CTD(TPL3) | - | |
2918 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | SSM6N37 | MOSFET (Metal Oxide) | 140mW | CST6D | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 10,000 | 2 N-Channel (Dual) | 20V | 250mA | 2.2Ohm @ 100mA, 4.5V | 1V @ 1mA | - | 12pF @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||
|
TW060Z120C,S1F | 17.8200 | |
7048 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C | Through Hole | TO-247-4 | SiC (Silicon Carbide Junction Transistor) | TO-247-4L(X) | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 1200 V | 36A (Tc) | 18V | 82mOhm @ 18A, 18V | 5V @ 4.2mA | 46 nC @ 18 V | +25V, -10V | 1530 pF @ 800 V | - | 170W (Tc) | |||||||||||||||||||||||||||||||
|
SSM10N961L,ELF | 0.8700 | |
9155 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 10-XFLGA, CSP | MOSFET (Metal Oxide) | 880mW (Ta) | TCSPAG-341501 | - | ROHS3 Compliant | 1 (Unlimited) | 10,000 | 2 N-Channel (Half Bridge) | 30V | 9A (Ta) | 2.3V @ 250µA | 17.3nC @ 10V | - | - | ||||||||||||||||||||||||||||||||||||
 |
TKR74F04PB,LXGQ | 4.5400 | |
8 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TKR74F04 | MOSFET (Metal Oxide) | TO-220SM(W) | download | 3 (168 Hours) | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 40 V | 250A (Ta) | 6V, 10V | 0.74mOhm @ 125A, 10V | 3V @ 1mA | 227 nC @ 10 V | ±20V | 14200 pF @ 10 V | - | 375W (Tc) | |||||||||||||||||||||||||||||||
|
TK200F04N1L,LXGQ | 3.5600 | |
1 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TK200F04 | MOSFET (Metal Oxide) | TO-220SM(W) | download | 3 (168 Hours) | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 40 V | 200A (Ta) | 6V, 10V | 0.9mOhm @ 100A, 10V | 3V @ 1mA | 214 nC @ 10 V | ±20V | 14920 pF @ 10 V | - | 375W (Tc) | |||||||||||||||||||||||||||||||
|
2SK3798(STA4,Q,M) | 1.4000 | |
9938 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C | Through Hole | TO-220-3 Full Pack | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 900 V | 4A (Ta) | 10V | 3.5Ohm @ 2A, 10V | 4V @ 1mA | 26 nC @ 10 V | ±30V | 800 pF @ 25 V | - | 40W (Tc) | |||||||||||||||||||||||||||||||
 |
SSM3K72KCT,L3F | 0.2500 | |
71 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII-H | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | SC-101, SOT-883 | SSM3K72 | MOSFET (Metal Oxide) | CST3 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 10,000 | N-Channel | 60 V | 400mA (Ta) | 4.5V, 10V | 1.5Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.6 nC @ 4.5 V | ±20V | 40 pF @ 10 V | - | 500mW (Ta) | ||||||||||||||||||||||||||||||
 |
SSM3K7002KFU,LF | 0.2000 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII-H | Tape & Reel (TR) | Active | 150°C | Surface Mount | SC-70, SOT-323 | SSM3K7002 | MOSFET (Metal Oxide) | USM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 60 V | 400mA (Ta) | 4.5V, 10V | 1.5Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.6 nC @ 4.5 V | ±20V | 40 pF @ 10 V | - | 150mW (Ta) | ||||||||||||||||||||||||||||||
 |
2SC5085-O(TE85L,F) | - | |
7025 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 125°C (TJ) | Surface Mount | SC-70, SOT-323 | 2SC5085 | 100mW | SC-70 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | - | 12V | 80mA | NPN | 80 @ 20mA, 10V | 7GHz | 1dB @ 500MHz | ||||||||||||||||||||||||||||||||||
 |
1SV314(TPL3,F) | 0.3800 | |
8 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | SC-79, SOD-523 | 1SV314 | ESC | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 8,000 | 3.4pF @ 2.5V, 1MHz | Single | 10 V | 2.5 | C0.5/C2.5 | - | ||||||||||||||||||||||||||||||||||||
|
RN2309,LXHF | 0.3900 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-70, SOT-323 | RN2309 | 100 mW | SC-70 | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 70 @ 10mA, 5V | 200 MHz | 47 kOhms | 22 kOhms | ||||||||||||||||||||||||||||||||||
 |
TPHR9003NL1,LQ | 1.5900 | |
9 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C | Surface Mount | 8-PowerTDFN | MOSFET (Metal Oxide) | 8-SOP Advance (5x5.75) | - | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 30 V | 150A (Tc) | 4.5V, 10V | 0.9mOhm @ 50A, 10V | 2.3V @ 1mA | 74 nC @ 10 V | ±20V | 6900 pF @ 15 V | - | 800mW (Ta), 170W (Tc) | ||||||||||||||||||||||||||||||||
 |
TK100A10N1,S4X | 3.9800 | |
50 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK100A10 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | Not Applicable | EAR99 | 8541.29.0095 | 50 | N-Channel | 100 V | 100A (Tc) | 10V | 3.8mOhm @ 50A, 10V | 4V @ 1mA | 140 nC @ 10 V | ±20V | 8800 pF @ 50 V | - | 45W (Tc) | ||||||||||||||||||||||||||||||
 |
TPH3R704PC,LQ | 0.9900 | |
14 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | TPH3R704 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 40 V | 82A (Tc) | 4.5V, 10V | 3.7mOhm @ 41A, 10V | 2.4V @ 300µA | 47 nC @ 10 V | ±20V | 3615 pF @ 20 V | - | 830mW (Ta), 90W (Tc) | |||||||||||||||||||||||||||||||
 |
HN2A01FE-GR(TE85LF | - | |
8778 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | HN2A01 | 100mW | ES6 | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 4,000 | 50V | 150mA | 100nA (ICBO) | 2 PNP (Dual) | 300mV @ 10mA, 100mA | 200 @ 2mA, 6V | 800MHz | |||||||||||||||||||||||||||||||||||
|
2SC4116SU-Y,LF | - | |
1862 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Discontinued at SIC | 125°C (TJ) | Surface Mount | SC-70, SOT-323 | 2SC4116 | 100 mW | SC-70 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 150 mA | 100nA (ICBO) | NPN | 250mV @ 10mA, 100mA | 70 @ 2mA, 6V | 80MHz | ||||||||||||||||||||||||||||||||||
 |
RN1105CT(TPL3) | - | |
8471 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SC-101, SOT-883 | RN1105 | 50 mW | CST3 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 10,000 | 20 V | 50 mA | 500nA | NPN - Pre-Biased | 150mV @ 250µA, 5mA | 120 @ 10mA, 5V | 2.2 kOhms | 47 kOhms |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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