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Discrete Semiconductor Products(2909)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | ECCN | HTSUS | Standard Package | Speed | FET Type | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) | Noise Figure (dB Typ @ f) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
TK100L60W,VQ | 34.7700 |  |
5509 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-3PL | TK100L60 | MOSFET (Metal Oxide) | TO-3P(L) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 100 | N-Channel | 600 V | 100A (Ta) | 10V | 18mOhm @ 50A, 10V | 3.7V @ 5mA | 360 nC @ 10 V | ±30V | 15000 pF @ 30 V | - | 797W (Tc) | |||||||||||||||||||||
 |
RN4989(T5L,F,T) | 0.3000 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN4989 | 200mW | US6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100µA (ICBO) | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 70 @ 10mA, 5V | 250MHz, 200MHz | 47kOhms | 22kOhms | ||||||||||||||||||||||||
 |
SSM3K15AFU,LF | 0.2300 | |
102 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIII | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SSM3K15 | MOSFET (Metal Oxide) | USM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 30 V | 100mA (Ta) | 2.5V, 4V | 3.6Ohm @ 10mA, 4V | 1.5V @ 100µA | ±20V | 13.5 pF @ 3 V | - | 150mW (Ta) | ||||||||||||||||||||||
 |
SSM3K56ACT,L3F | 0.4700 | |
188 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SC-101, SOT-883 | SSM3K56 | MOSFET (Metal Oxide) | CST3 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 10,000 | N-Channel | 20 V | 1.4A (Ta) | 1.5V, 4.5V | 235mOhm @ 800mA, 4.5V | 1V @ 1mA | 1 nC @ 4.5 V | ±8V | 55 pF @ 10 V | - | 500mW (Ta) | |||||||||||||||||||||
 |
1SS190TE85LF | 0.3500 | |
47 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 1SS190 | Standard | SC-59-3 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Small Signal =< 200mA (Io), Any Speed | 80 V | 1.2 V @ 100 mA | 4 ns | 500 nA @ 80 V | 125°C (Max) | 100mA | 4pF @ 0V, 1MHz | |||||||||||||||||||||||||
|
2SA1312GRTE85LF | 0.0618 | |
5284 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 2SA1312 | 150 mW | S-Mini | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 120 V | 100 mA | 100nA (ICBO) | PNP | 300mV @ 1mA, 10mA | 200 @ 2mA, 6V | 100MHz | |||||||||||||||||||||||||
 |
TRS6E65C,S1AQ | - | |
2406 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Obsolete | Through Hole | TO-220-2 | TRS6E65 | SiC (Silicon Carbide) Schottky | TO-220-2L | - | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 50 | No Recovery Time > 500mA (Io) | 650 V | 1.7 V @ 6 A | 0 ns | 90 µA @ 650 V | 175°C (Max) | 6A | 35pF @ 650V, 1MHz | |||||||||||||||||||||||||
 |
CLS03(TE16L,SQC,Q) | - | |
9458 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | Surface Mount | L-FLAT™ | CLS03 | Schottky | L-FLAT™ (4x5.5) | download | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 60 V | 580 mV @ 10 A | 1 mA @ 60 V | -40°C ~ 125°C | 10A | 345pF @ 10V, 1MHz | |||||||||||||||||||||||||||
 |
RN1104MFV,L3F(CT | 0.1800 | |
7 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-723 | RN1104 | 150 mW | VESM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 8,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 500µA, 5mA | 80 @ 10mA, 5V | 47 kOhms | 47 kOhms | |||||||||||||||||||||||||
 |
SSM3K335R,LF | 0.4700 | |
95 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SSM3K335 | MOSFET (Metal Oxide) | SOT-23F | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 6A (Ta) | 4.5V, 10V | 38mOhm @ 4A, 10V | 2.5V @ 100µA | 2.7 nC @ 4.5 V | ±20V | 340 pF @ 15 V | - | 1W (Ta) | |||||||||||||||||||||
 |
CMS03(TE12L,Q,M) | 0.6600 | |
17 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOD-128 | CMS03 | Schottky | M-FLAT (2.4x3.8) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | 450 mV @ 3 A | 500 µA @ 30 V | -40°C ~ 150°C | 3A | - | ||||||||||||||||||||||||||
 |
RN1964FE(TE85L,F) | 0.1000 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SOT-563, SOT-666 | RN1964 | 100mW | ES6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 100nA (ICBO) | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250MHz | 47kOhms | 47kOhms | |||||||||||||||||||||||||
|
CRS09(TE85L) | - | |
9473 | 0.00000000 | Toshiba Semiconductor and Storage | - | Cut Tape (CT) | Obsolete | Surface Mount | SOD-123F | CRS09 | Schottky | S-FLAT (1.6x3.5) | download | RoHS non-compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | 460 mV @ 1.5 A | 50 µA @ 30 V | -40°C ~ 150°C | 1.5A | - | ||||||||||||||||||||||||||
 |
RN2711,LF | 0.3000 | |
100 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 5-TSSOP, SC-70-5, SOT-353 | RN2711 | 200mW | USV | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50V | 100mA | 100nA (ICBO) | 2 PNP - Pre-Biased (Dual) (Emitter Coupled) | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 200MHz | 10kOhms | - | |||||||||||||||||||||||||
|
CRS15I30B(TE85L,QM | 0.1292 | |
7231 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOD-123F | CRS15I30 | Schottky | S-FLAT (1.6x3.5) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | 400 mV @ 1.5 A | 100 µA @ 30 V | 150°C (Max) | 1.5A | 82pF @ 10V, 1MHz | ||||||||||||||||||||||||||
 |
TK16A60W,S4VX | 2.9700 | |
50 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK16A60 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 15.8A (Ta) | 10V | 190mOhm @ 7.9A, 10V | 3.7V @ 790µA | 38 nC @ 10 V | ±30V | 1350 pF @ 300 V | - | 40W (Tc) | |||||||||||||||||||||
|
RN4903,LXHF(CT | 0.4400 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN4903 | 200mW | US6 | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50V | 100mA | 500nA | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 70 @ 10mA, 5V | 200MHz, 250MHz | 22kOhms | 22kOhms | |||||||||||||||||||||||||
|
RN1109CT(TPL3) | - | |
8001 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SC-101, SOT-883 | RN1109 | 50 mW | CST3 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 10,000 | 20 V | 50 mA | 500nA | NPN - Pre-Biased | 150mV @ 250µA, 5mA | 100 @ 10mA, 5V | 47 kOhms | 22 kOhms | ||||||||||||||||||||||||||
 |
2SA1429-Y(T2TR,F,M | - | |
8569 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | SC-71 | 2SA1429 | 1 W | MSTM | download | 1 (Unlimited) | EAR99 | 8541.29.0075 | 1 | 80 V | 2 A | 1µA (ICBO) | PNP | 500mV @ 50mA, 1A | 70 @ 500mA, 2V | 80MHz | ||||||||||||||||||||||||||
|
2SA1428-Y(T2TR,A,F | - | |
4372 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | SC-71 | 2SA1428 | 900 mW | MSTM | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 50 V | 2 A | 1µA (ICBO) | PNP | 500mV @ 50mA, 1A | 70 @ 500mA, 2V | 100MHz | ||||||||||||||||||||||||||
 |
2SC2235-Y,USNHF(M | - | |
6441 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC2235 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 120 V | 800 mA | 100nA (ICBO) | NPN | 1V @ 50mA, 500mA | 80 @ 100mA, 5V | 120MHz | ||||||||||||||||||||||||||
|
2SA1020-Y(T6ND1,AF | - | |
8322 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SA1020 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 50 V | 2 A | 1µA (ICBO) | PNP | 500mV @ 50mA, 1A | 70 @ 500mA, 2V | 100MHz | ||||||||||||||||||||||||||
|
SSM3J56MFV,L3F | 0.4500 | |
490 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SOT-723 | SSM3J56 | MOSFET (Metal Oxide) | VESM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 8,000 | P-Channel | 20 V | 800mA (Ta) | 1.2V, 4.5V | 390mOhm @ 800mA, 4.5V | - | ±8V | 100 pF @ 10 V | - | 150mW (Ta) | ||||||||||||||||||||||
|
2SA2154MFV-Y,L3F | 0.1900 | |
7 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SOT-723 | 2SA2154 | 150 mW | VESM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 8,000 | 50 V | 150 mA | 100nA (ICBO) | PNP | 300mV @ 10mA, 100mA | 120 @ 2mA, 6V | 80MHz | |||||||||||||||||||||||||
 |
TPN1R603PL,L1Q | 0.8900 | |
63 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerVDFN | TPN1R603 | MOSFET (Metal Oxide) | 8-TSON Advance (3.1x3.1) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 30 V | 80A (Tc) | 4.5V, 10V | 1.6mOhm @ 40A, 10V | 2.1V @ 300µA | 41 nC @ 10 V | ±20V | 3900 pF @ 15 V | - | 104W (Tc) | |||||||||||||||||||||
 |
RN1604(TE85L,F) | 0.0618 | |
1849 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-74, SOT-457 | RN1604 | 300mW | SM6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100nA (ICBO) | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250MHz | 47kOhms | 47kOhms | ||||||||||||||||||||||||
|
2SK3388(TE24L,Q) | - | |
7495 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | SC-97 | 2SK3388 | MOSFET (Metal Oxide) | 4-TFP (9.2x9.2) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1,500 | N-Channel | 250 V | 20A (Ta) | 10V | 105mOhm @ 10A, 10V | 3.5V @ 1mA | 100 nC @ 10 V | ±20V | 4000 pF @ 10 V | - | 125W (Tc) | ||||||||||||||||||||||
|
TRS12V65H,LQ | 3.2800 | |
5 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 4-VSFN Exposed Pad | SiC (Silicon Carbide) Schottky | 4-DFN-EP (8x8) | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 2,500 | No Recovery Time > 500mA (Io) | 650 V | 1.35 V @ 12 A | 0 ns | 120 µA @ 650 V | 175°C | 12A | 778pF @ 1V, 1MHz | ||||||||||||||||||||||||||
 |
2SC4215-Y(TE85L,F) | 0.4900 | |
7 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | SC-70, SOT-323 | 2SC4215 | 100mW | SC-70 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 17dB ~ 23dB | 30V | 20mA | NPN | 100 @ 1mA, 6V | 550MHz | 2dB ~ 5dB @ 100MHz | |||||||||||||||||||||||||
|
RN2903,LF(CT | 0.2800 | |
3513 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN2903 | 200mW | US6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 500nA | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 70 @ 10mA, 5V | 200MHz | 22kOhms | 22kOhms |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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