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Discrete Semiconductor Products(2909)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Input Type | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Configuration | Speed | FET Type | Test Condition | Gain | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Voltage - DC Reverse (Vr) (Max) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Pulsed (Icm) | Vce(on) (Max) @ Vge, Ic | Switching Energy | Td (on/off) @ 25°C | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) | Noise Figure (dB Typ @ f) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2SC4793,TOA1F(J | - |  |
2036 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SC4793 | 2 W | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0075 | 1 | 230 V | 1 A | 1µA (ICBO) | NPN | 1.5V @ 50mA, 500mA | 100 @ 100mA, 5V | 100MHz | ||||||||||||||||||||||||||||||||||
 |
CRS04(TE85L) | - | |
7404 | 0.00000000 | Toshiba Semiconductor and Storage | - | Cut Tape (CT) | Obsolete | Surface Mount | SOD-123F | CRS04 | Schottky | S-FLAT (1.6x3.5) | download | RoHS non-compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 40 V | 510 mV @ 1 A | 100 µA @ 40 V | -40°C ~ 150°C | 1A | - | ||||||||||||||||||||||||||||||||||
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CMS15I40A(TE12L,QM | 0.5900 | |
6510 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOD-128 | CMS15 | Schottky | M-FLAT (2.4x3.8) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 40 V | 490 mV @ 1.5 A | 100 µA @ 40 V | 150°C (Max) | 1.5A | 62pF @ 10V, 1MHz | ||||||||||||||||||||||||||||||||||
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SSM6N42FE(TE85L,F) | - | |
4807 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SSM6N42 | MOSFET (Metal Oxide) | 150mW | ES6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 2 N-Channel (Dual) | 20V | 800mA | 240mOhm @ 500mA, 4.5V | 1V @ 1mA | 2nC @ 4.5V | 90pF @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||
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2SC2229-Y(TE6,F,M) | - | |
2366 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC2229 | 800 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 150 V | 50 mA | 100nA (ICBO) | NPN | 500mV @ 1mA, 10mA | 70 @ 10mA, 5V | 120MHz | ||||||||||||||||||||||||||||||||||
 |
CLS03(TE16R,Q) | - | |
7771 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | Surface Mount | L-FLAT™ | CLS03 | Schottky | L-FLAT™ (4x5.5) | download | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 60 V | 580 mV @ 10 A | 1 mA @ 60 V | -40°C ~ 125°C | 10A | 345pF @ 10V, 1MHz | |||||||||||||||||||||||||||||||||||
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RN1907,LF(CT | 0.2800 | |
9444 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN1907 | 200mW | US6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 500nA | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250MHz | 10kOhms | 47kOhms | ||||||||||||||||||||||||||||||||
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RN1904FE,LF(CT | 0.2500 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN1904 | 100mW | ES6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 100nA (ICBO) | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250MHz | 47kOhms | 47kOhms | ||||||||||||||||||||||||||||||||
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SSM6N61NU,LF | 0.4200 | |
8347 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | SSM6N61 | MOSFET (Metal Oxide) | 2W | 6-UDFNB (2x2) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | 2 N-Channel (Dual) | 20V | 4A | 33mOhm @ 4A, 4.5V | 1V @ 1mA | 3.6nC @ 4.5V | 410pF @ 10V | Logic Level Gate, 1.5V Drive | |||||||||||||||||||||||||||||||
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TK35A08N1,S4X | 1.0500 | |
24 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK35A08 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 80 V | 35A (Tc) | 10V | 12.2mOhm @ 17.5A, 10V | 4V @ 300µA | 25 nC @ 10 V | ±20V | 1700 pF @ 40 V | - | 30W (Tc) | |||||||||||||||||||||||||||||
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DSF01S30SL,L3F | 0.3500 | |
62 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 2-SMD, No Lead | DSF01S30 | Schottky | SL2 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 10,000 | Small Signal =< 200mA (Io), Any Speed | 30 V | 500 mV @ 100 mA | 50 µA @ 30 V | 125°C (Max) | 100mA | 9.02pF @ 2V, 1MHz | ||||||||||||||||||||||||||||||||||
 |
TPH3300CNH,L1Q | 1.6100 | |
8 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPH3300 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 150 V | 18A (Ta) | 10V | 33mOhm @ 9A, 10V | 4V @ 300µA | 10.6 nC @ 10 V | ±20V | 1100 pF @ 75 V | - | 1.6W (Ta), 57W (Tc) | |||||||||||||||||||||||||||||
 |
TK14G65W,RQ | 2.4800 | |
1 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TK14G65 | MOSFET (Metal Oxide) | D2PAK | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 650 V | 13.7A (Ta) | 10V | 250mOhm @ 6.9A, 10V | 3.5V @ 690µA | 35 nC @ 10 V | ±30V | 1300 pF @ 300 V | - | 130W (Tc) | |||||||||||||||||||||||||||||
 |
SSM3K09FU,LF | 0.4200 | |
74 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | SC-70, SOT-323 | SSM3K09 | MOSFET (Metal Oxide) | USM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 30 V | 400mA (Ta) | 3.3V, 10V | 700mOhm @ 200MA, 10V | 1.8V @ 100µA | ±20V | 20 pF @ 5 V | - | 150mW (Ta) | ||||||||||||||||||||||||||||||
 |
RN2119MFV,L3F | 0.1800 | |
7 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-723 | RN2119 | 150 mW | VESM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 8,000 | 50 V | 100 mA | 100nA (ICBO) | PNP - Pre-Biased | 300mV @ 500µA, 5mA | 120 @ 1mA, 5V | 1 kOhms | |||||||||||||||||||||||||||||||||||
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SSM3K337R,LF | 0.4600 | |
8818 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIV | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SSM3K337 | MOSFET (Metal Oxide) | SOT-23F | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 38 V | 2A (Ta) | 4V, 10V | 150mOhm @ 2A, 10V | 1.7V @ 1mA | 3 nC @ 10 V | ±20V | 120 pF @ 10 V | - | 1W (Ta) | |||||||||||||||||||||||||||||
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GT30J341,Q | 3.4000 | |
100 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tray | Active | 175°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | GT30J341 | Standard | 230 W | TO-3P(N) | download | ROHS3 Compliant | 1 (Unlimited) | 264-GT30J341Q | EAR99 | 8541.29.0095 | 100 | 300V, 30A, 24Ohm, 15V | 50 ns | 600 V | 59 A | 120 A | 2V @ 15V, 30A | 800µJ (on), 600µJ (off) | 80ns/280ns | ||||||||||||||||||||||||||||||
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CLH01(TE16R,Q) | - | |
4207 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | Surface Mount | L-FLAT™ | CLH01 | Standard | L-FLAT™ (4x5.5) | download | 1 (Unlimited) | EAR99 | 8541.10.0080 | 1 | Fast Recovery =< 500ns, > 200mA (Io) | 200 V | 980 mV @ 3 A | 35 ns | 10 µA @ 200 V | -40°C ~ 150°C | 3A | - | ||||||||||||||||||||||||||||||||||
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TK16A55D(STA4,Q,M) | - | |
3760 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK16A55 | MOSFET (Metal Oxide) | TO-220SIS | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 550 V | 16A (Ta) | 330mOhm @ 8A, 10V | 4V @ 1mA | 45 nC @ 10 V | 2600 pF @ 25 V | - | - | |||||||||||||||||||||||||||||||
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2SA1873-GR(TE85L,F | 0.3500 | |
5 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | 5-TSSOP, SC-70-5, SOT-353 | 2SA1873 | 200mW | USV | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 150mA | 100nA (ICBO) | 2 PNP (Dual) Matched Pair, Common Emitter | 300mV @ 10mA, 100mA | 200 @ 2mA, 6V | 80MHz | |||||||||||||||||||||||||||||||||
 |
CUS05S30,H3F | 0.3100 | |
33 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-76, SOD-323 | CUS05S30 | Schottky | USC | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | 340 mV @ 100 mA | 150 µA @ 10 V | 125°C (Max) | 500mA | 55pF @ 0V, 1MHz | ||||||||||||||||||||||||||||||||||
 |
2SK2883(TE24L,Q) | - | |
9932 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2SK2883 | MOSFET (Metal Oxide) | TO-220SM | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 800 V | 3A (Ta) | 10V | 3.6Ohm @ 1.5A, 10V | 4V @ 1mA | 25 nC @ 10 V | ±30V | 750 pF @ 25 V | - | 75W (Tc) | ||||||||||||||||||||||||||||||
 |
2SC2714-O(TE85L,F) | 0.0964 | |
6404 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 2SC2714 | 100mW | S-Mini | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 23dB | 30V | 20mA | NPN | 70 @ 1mA, 6V | 550MHz | 2.5dB @ 100MHz | |||||||||||||||||||||||||||||||||
 |
RN1316,LXHF | 0.3900 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SC-70, SOT-323 | RN1316 | 100 mW | SC-70 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 250 MHz | 4.7 kOhms | 10 kOhms | |||||||||||||||||||||||||||||||||
|
TMBT3904,LM | 0.1800 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TMBT3904 | 320 mW | SOT-23-3 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 150 mA | 100nA (ICBO) | NPN | 300mV @ 5mA, 50mA | 100 @ 10mA, 1V | 300MHz | |||||||||||||||||||||||||||||||||
|
CRS20I30A(TE85L,QM | 0.5100 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOD-123F | CRS20I30 | Schottky | S-FLAT (1.6x3.5) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | 490 mV @ 2 A | 60 µA @ 30 V | 150°C (Max) | 2A | 50pF @ 10V, 1MHz | ||||||||||||||||||||||||||||||||||
 |
RN1107ACT(TPL3) | 0.3400 | |
9 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-101, SOT-883 | RN1107 | 100 mW | CST3 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 10,000 | 50 V | 80 mA | 500nA | NPN - Pre-Biased | 150mV @ 250µA, 5mA | 80 @ 10mA, 5V | 10 kOhms | 47 kOhms | |||||||||||||||||||||||||||||||||
 |
RN1704JE(TE85L,F) | 0.4700 | |
116 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-553 | RN1704 | 100mW | ESV | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 100nA (ICBO) | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250MHz | 47kOhms | 47kOhms | ||||||||||||||||||||||||||||||||
|
TK19A45D(STA4,Q,M) | 3.6700 | |
2154 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK19A45 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 450 V | 19A (Ta) | 10V | 250mOhm @ 9.5A, 10V | 4V @ 1mA | 45 nC @ 10 V | ±30V | 2600 pF @ 25 V | - | 50W (Tc) | |||||||||||||||||||||||||||||
|
CUS04(TE85L,Q,M) | - | |
2743 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SC-76, SOD-323 | CUS04 | Schottky | US-FLAT (1.25x2.5) | download | RoHS Compliant | CUS04(TE85LQM) | EAR99 | 8541.10.0080 | 4,000 | Fast Recovery =< 500ns, > 200mA (Io) | 60 V | 580 mV @ 700 mA | 100 µA @ 60 V | -40°C ~ 150°C | 700mA | 38pF @ 10V, 1MHz |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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