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Discrete Semiconductor Products(2909)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Tolerance | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Configuration | Speed | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Drain (Idss) @ Vds (Vgs=0) | Voltage - Cutoff (VGS off) @ Id | Current - Collector Cutoff (Max) | Voltage - Zener (Nom) (Vz) | Impedance (Max) (Zzt) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2SK879-GR(TE85L,F) | 0.4200 |  |
1 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | SC-70, SOT-323 | 2SK879 | 100 mW | USM | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 8.2pF @ 10V | 2.6 mA @ 10 V | 400 mV @ 100 nA | |||||||||||||||||||||||||||||||||||
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RN2602(TE85L,F) | 0.4700 | |
3213 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-74, SOT-457 | RN2602 | 300mW | SM6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100nA (ICBO) | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 200MHz | 10kOhms | 10kOhms | |||||||||||||||||||||||||||||||
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RN1707JE(TE85L,F) | 0.4000 | |
4 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-553 | RN1707 | 100mW | ESV | download | 1 (Unlimited) | 264-RN1707JE(TE85LF)TR | EAR99 | 8541.21.0075 | 4,000 | 50V | 100mA | 500nA | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 250MHz | 10kOhms | 47kOhms | |||||||||||||||||||||||||||||||
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TRS24N65FB,S1F(S | - | |
9125 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | Through Hole | TO-247-3 | TRS24N65 | SiC (Silicon Carbide) Schottky | TO-247 | - | RoHS Compliant | 1 (Unlimited) | TRS24N65FBS1F(S | EAR99 | 8541.10.0080 | 30 | No Recovery Time > 500mA (Io) | 1 Pair Common Cathode | 650 V | 12A (DC) | 1.7 V @ 12 A | 0 ns | 90 µA @ 650 V | 175°C (Max) | |||||||||||||||||||||||||||||||
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CRZ10(TE85L,Q) | - | |
1889 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | ±10% | -40°C ~ 150°C | Surface Mount | SOD-123F | CRZ10 | 700 mW | S-FLAT (1.6x3.5) | download | 1 (Unlimited) | CRZ10TR-NDR | EAR99 | 8541.10.0050 | 3,000 | 1 V @ 200 mA | 10 µA @ 6 V | 10 V | 30 Ohms | ||||||||||||||||||||||||||||||||||
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SSM6N62TU,LF | 0.4200 | |
12 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | SSM6N62 | MOSFET (Metal Oxide) | 500mW (Ta) | UF6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 2 N-Channel (Dual) | 20V | 800mA (Ta) | 85mOhm @ 800mA, 4.5V | 1V @ 1mA | 2nC @ 4.5V | 177pF @ 10V | Logic Level Gate, 1.2V Drive | ||||||||||||||||||||||||||||||
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2SA1313-O(TE85L,F) | 0.0592 | |
6639 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Not For New Designs | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 2SA1313 | 200 mW | S-Mini | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 500 mA | 100nA (ICBO) | PNP | 250mV @ 10mA, 100mA | 70 @ 100mA, 1V | 200MHz | ||||||||||||||||||||||||||||||||
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2SC5201(TE6,F,M) | - | |
1063 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC5201 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 1 | 600 V | 50 mA | 1µA (ICBO) | NPN | 1V @ 500mA, 20mA | 100 @ 20mA, 5V | - | |||||||||||||||||||||||||||||||||
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TPWR8503NL,L1Q | 2.7600 | |
5 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-PowerWDFN | TPWR8503 | MOSFET (Metal Oxide) | 8-DSOP Advance | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 30 V | 150A (Tc) | 4.5V, 10V | 0.85mOhm @ 50A, 10V | 2.3V @ 1mA | 74 nC @ 10 V | ±20V | 6900 pF @ 15 V | - | 800mW (Ta), 142W (Tc) | ||||||||||||||||||||||||||||
|
CUS03(TE85L,Q,M) | - | |
8668 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SC-76, SOD-323 | CUS03 | Schottky | US-FLAT (1.25x2.5) | download | RoHS Compliant | CUS03(TE85LQM) | EAR99 | 8541.10.0080 | 4,000 | Fast Recovery =< 500ns, > 200mA (Io) | 40 V | 520 mV @ 700 mA | 100 µA @ 40 V | -40°C ~ 150°C | 700mA | 45pF @ 10V, 1MHz | |||||||||||||||||||||||||||||||||
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RN2110,LF(CT | 0.2000 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-75, SOT-416 | RN2110 | 100 mW | SSM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 100nA (ICBO) | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 200 MHz | 4.7 kOhms | ||||||||||||||||||||||||||||||||
 |
SSM6P35AFU,LF | 0.4300 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SSM6P35 | MOSFET (Metal Oxide) | 285mW (Ta) | US6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 2 P-Channel (Dual) | 20V | 250mA (Ta) | 1.4Ohm @ 150mA, 4.5V | 1V @ 100µA | - | 42pF @ 10V | Logic Level Gate, 1.2V Drive | ||||||||||||||||||||||||||||||
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RN1318(TE85L,F) | 0.2800 | |
470 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-70, SOT-323 | RN1318 | 100 mW | SC-70 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 250 MHz | 47 kOhms | 10 kOhms | |||||||||||||||||||||||||||||||
|
SSM6N16FUTE85LF | 0.5000 | |
600 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 6-TSSOP, SC-88, SOT-363 | SSM6N16 | MOSFET (Metal Oxide) | 200mW | US6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 2 N-Channel (Dual) | 20V | 100mA | 3Ohm @ 10mA, 4V | 1.1V @ 100µA | - | 9.3pF @ 3V | - | ||||||||||||||||||||||||||||||
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SSM6N16FE,L3F | 0.3700 | |
7 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | SOT-563, SOT-666 | SSM6N16 | MOSFET (Metal Oxide) | 150mW (Ta) | ES6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 8,000 | 2 N-Channel (Dual) | 20V | 100mA (Ta) | 3Ohm @ 10mA, 4V | 1.1V @ 100µA | - | 9.3pF @ 3V | - | ||||||||||||||||||||||||||||||
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CMG06(TE12L,Q,M) | - | |
6508 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SOD-128 | CMG06 | Standard | M-FLAT (2.4x3.8) | download | RoHS Compliant | 1 (Unlimited) | CMG06(TE12LQM) | EAR99 | 8541.10.0080 | 3,000 | Standard Recovery >500ns, > 200mA (Io) | 600 V | 1.1 V @ 1 A | 10 µA @ 600 V | -40°C ~ 150°C | 1A | - | ||||||||||||||||||||||||||||||||
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TPC6109-H(TE85L,FM | - | |
6133 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIII-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TPC6109 | MOSFET (Metal Oxide) | VS-6 (2.9x2.8) | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | P-Channel | 30 V | 5A (Ta) | 4.5V, 10V | 59mOhm @ 2.5A, 10V | 1.2V @ 200µA | 12.3 nC @ 10 V | ±20V | 490 pF @ 10 V | - | 700mW (Ta) | |||||||||||||||||||||||||||||
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2SC2482(T6TOJS,F,M | - | |
3501 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC2482 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 1 | 300 V | 100 mA | 1µA (ICBO) | NPN | 1V @ 1mA, 10mA | 30 @ 20mA, 10V | 50MHz | |||||||||||||||||||||||||||||||||
|
RN2407,LXHF | 0.3400 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN2407 | 200 mW | S-Mini | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200 MHz | 10 kOhms | 47 kOhms | ||||||||||||||||||||||||||||||||
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TPC8065-H,LQ(S | - | |
6115 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | TPC8065 | MOSFET (Metal Oxide) | 8-SOP | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 30 V | 13A (Ta) | 4.5V, 10V | 11.6mOhm @ 6.5A, 10V | 2.3V @ 200µA | 20 nC @ 10 V | ±20V | 1350 pF @ 10 V | - | 1W (Ta) | ||||||||||||||||||||||||||||
 |
TK110Z65Z,S1F | 6.4000 | |
25 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSVI | Tube | Active | 150°C | Through Hole | TO-247-4 | MOSFET (Metal Oxide) | TO-247-4L(T) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 25 | N-Channel | 650 V | 24A (Ta) | 10V | 110mOhm @ 12A, 10V | 4V @ 1.02mA | 40 nC @ 10 V | ±30V | 2250 pF @ 300 V | - | 190W (Tc) | |||||||||||||||||||||||||||||
 |
2SA1837,TOA1F(J | - | |
8224 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SA1837 | 2 W | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0075 | 1 | 230 V | 1 A | 1µA (ICBO) | PNP | 1.5V @ 50mA, 500mA | 100 @ 100mA, 5V | 70MHz | |||||||||||||||||||||||||||||||||
 |
RN1114MFV,L3F | 0.2000 | |
8 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-723 | RN1114 | 150 mW | VESM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 8,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 250 MHz | 1 kOhms | 10 kOhms | |||||||||||||||||||||||||||||||
 |
2SJ377(TE16R1,NQ) | - | |
5182 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2SJ377 | MOSFET (Metal Oxide) | PW-MOLD | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | P-Channel | 60 V | 5A (Ta) | 4V, 10V | 190mOhm @ 2.5A, 10V | 2V @ 1mA | 22 nC @ 10 V | ±20V | 630 pF @ 10 V | - | 20W (Tc) | ||||||||||||||||||||||||||||
 |
1SS413,L3M | 0.2700 | |
101 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 2-SMD, Flat Lead | 1SS413 | Schottky | fSC | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 10,000 | Small Signal =< 200mA (Io), Any Speed | 20 V | 550 mV @ 50 mA | 500 nA @ 20 V | 125°C (Max) | 50mA | 3.9pF @ 0V, 1MHz | |||||||||||||||||||||||||||||||||
|
2SC4116-GR,LF | 0.1800 | |
39 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | SC-70, SOT-323 | 2SC4116 | 100 mW | SC-70 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 150 mA | 100nA (ICBO) | NPN | 250mV @ 10mA, 100mA | 70 @ 2mA, 6V | 80MHz | ||||||||||||||||||||||||||||||||
|
RN2101,LF(CT | 0.2000 | |
2719 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-75, SOT-416 | RN2101 | 100 mW | SSM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 30 @ 10mA, 5V | 200 MHz | 4.7 kOhms | 4.7 kOhms | |||||||||||||||||||||||||||||||
|
2SA1587-GR,LF | 0.2300 | |
28 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | SC-70, SOT-323 | 2SA1587 | 100 mW | SC-70 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 120 V | 100 mA | 100nA (ICBO) | PNP | 300mV @ 1mA, 10mA | 200 @ 2mA, 6V | 100MHz | ||||||||||||||||||||||||||||||||
|
CRZ10(TE85L,Q,M) | 0.4900 | |
9265 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | ±10% | -40°C ~ 150°C (TJ) | Surface Mount | SOD-123F | CRZ10 | 700 mW | S-FLAT (1.6x3.5) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0050 | 3,000 | 1 V @ 200 mA | 10 µA @ 6 V | 10 V | 30 Ohms | ||||||||||||||||||||||||||||||||||
 |
CUHS10F60,H3F | 0.4300 | |
25 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 2-SMD, Flat Lead | CUHS10 | Schottky | US2H | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 60 V | 40 µA @ 60 V | 150°C (Max) | 1A | 130pF @ 0V, 1MHz |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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