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Email: sales@sic-components.com
Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Tolerance | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | Configuration | Speed | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Cutoff (Max) | Voltage - Zener (Nom) (Vz) | Impedance (Max) (Zzt) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) |
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TK14C65W,S1Q | - | ![]() |
2199 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Obsolete | 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | TK14C65 | MOSFET (Metal Oxide) | I2PAK | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 13.7A (Ta) | 10V | 250mOhm @ 6.9A, 10V | 3.5V @ 690µA | 35 nC @ 10 V | ±30V | 1300 pF @ 300 V | - | 130W (Tc) | |||||||||||||||||||||||||||
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TPC8065-H,LQ(S | - | ![]() |
6115 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | TPC8065 | MOSFET (Metal Oxide) | 8-SOP | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 30 V | 13A (Ta) | 4.5V, 10V | 11.6mOhm @ 6.5A, 10V | 2.3V @ 200µA | 20 nC @ 10 V | ±20V | 1350 pF @ 10 V | - | 1W (Ta) | ||||||||||||||||||||||||||
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SSM6J771G,LF | 0.6700 | ![]() |
4667 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 6-UFBGA, WLCSP | SSM6J771 | MOSFET (Metal Oxide) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 20 V | 5A (Ta) | 2.5V, 8.5V | 31mOhm @ 3A, 8.5V | 1.2V @ 1mA | 9.8 nC @ 4.5 V | ±12V | 870 pF @ 10 V | - | 1.2W (Ta) | |||||||||||||||||||||||||||
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TRS6V65H,LQ | 2.3200 | ![]() |
5 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 4-VSFN Exposed Pad | SiC (Silicon Carbide) Schottky | 4-DFN-EP (8x8) | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 2,500 | No Recovery Time > 500mA (Io) | 650 V | 1.35 V @ 6 A | 0 ns | 70 µA @ 650 V | 175°C | 6A | 392pF @ 1V, 1MHz | |||||||||||||||||||||||||||||||
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1SS413,L3M | 0.2700 | ![]() |
101 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 2-SMD, Flat Lead | 1SS413 | Schottky | fSC | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 10,000 | Small Signal =< 200mA (Io), Any Speed | 20 V | 550 mV @ 50 mA | 500 nA @ 20 V | 125°C (Max) | 50mA | 3.9pF @ 0V, 1MHz | |||||||||||||||||||||||||||||||
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TPCA8057-H,LQ(M | - | ![]() |
1274 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPCA8057 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 42A (Ta) | 4.5V, 10V | 2.6mOhm @ 21A, 10V | 2.3V @ 500µA | 61 nC @ 10 V | ±20V | 5200 pF @ 10 V | - | 1.6W (Ta), 57W (Tc) | ||||||||||||||||||||||||||
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TK42E12N1,S1X | 1.3700 | ![]() |
5104 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 | TK42E12 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | TK42E12N1S1X | EAR99 | 8541.29.0095 | 50 | N-Channel | 120 V | 88A (Tc) | 10V | 9.4mOhm @ 21A, 10V | 4V @ 1mA | 52 nC @ 10 V | ±20V | 3100 pF @ 60 V | - | 140W (Tc) | |||||||||||||||||||||||||
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TK25S06N1L,LQ | 1.0300 | ![]() |
5833 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK25S06 | MOSFET (Metal Oxide) | DPAK+ | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 60 V | 25A (Ta) | 4.5V, 10V | 18.5mOhm @ 12.5A, 10V | 2.5V @ 100µA | 15 nC @ 10 V | ±20V | 855 pF @ 10 V | - | 57W (Tc) | ||||||||||||||||||||||||||
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RN1114MFV,L3F | 0.2000 | ![]() |
8 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-723 | RN1114 | 150 mW | VESM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 8,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 250 MHz | 1 kOhms | 10 kOhms | |||||||||||||||||||||||||||||
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2SJ377(TE16R1,NQ) | - | ![]() |
5182 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2SJ377 | MOSFET (Metal Oxide) | PW-MOLD | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | P-Channel | 60 V | 5A (Ta) | 4V, 10V | 190mOhm @ 2.5A, 10V | 2V @ 1mA | 22 nC @ 10 V | ±20V | 630 pF @ 10 V | - | 20W (Tc) | ||||||||||||||||||||||||||
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RN49A1(TE85L,F) | - | ![]() |
3359 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN49A1 | 200mW | US6 | - | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50V | 100mA | 500nA | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200MHz, 250MHz | 2.2kOhms, 22kOhms | 47kOhms | ||||||||||||||||||||||||||||||
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RN1115,LXHF(CT | 0.3300 | ![]() |
6 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SC-75, SOT-416 | RN1115 | 100 mW | SSM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 250 MHz | 2.2 kOhms | 10 kOhms | ||||||||||||||||||||||||||||||
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RN1104MFV,L3XHF(CT | 0.3400 | ![]() |
8 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SOT-723 | RN1104 | 150 mW | VESM | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 8,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 500µA, 5mA | 80 @ 10mA, 5V | 47 kOhms | 47 kOhms | |||||||||||||||||||||||||||||||
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TK190E65Z,S1X | 2.7800 | ![]() |
156 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 150°C | Through Hole | TO-220-3 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 650 V | 15A (Ta) | 10V | 190mOhm @ 7.5A, 10V | 4V @ 610µA | 25 nC @ 10 V | ±30V | 1370 pF @ 300 V | - | 130W (Tc) | |||||||||||||||||||||||||||
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1SS423(TE85L,F) | 0.4400 | ![]() |
6 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-75, SOT-416 | 1SS423 | Schottky | SSM | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Small Signal =< 200mA (Io), Any Speed | 1 Pair Series Connection | 40 V | 100mA | 620 mV @ 100 mA | 5 µA @ 40 V | 125°C (Max) | |||||||||||||||||||||||||||||||
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RN1117(TE85L,F) | 0.3900 | ![]() |
1 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-75, SOT-416 | RN1117 | 100 mW | SSM | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 30 @ 10mA, 5V | 250 MHz | 10 kOhms | 4.7 kOhms | ||||||||||||||||||||||||||||||
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RN2411,LF | 0.1800 | ![]() |
2606 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN2411 | 200 mW | S-Mini | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 100nA (ICBO) | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 200 MHz | 10 kOhms | ||||||||||||||||||||||||||||||
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RN2130MFV,L3F | 0.2000 | ![]() |
1257 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-723 | RN2130 | 150 mW | VESM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 8,000 | 50 V | 100 mA | 100nA (ICBO) | PNP - Pre-Biased | 300mV @ 500µA, 5mA | 100 @ 10mA, 5V | 100 kOhms | 100 kOhms | ||||||||||||||||||||||||||||||
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SSM6K406TU,LF | 0.5200 | ![]() |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | SSM6K406 | MOSFET (Metal Oxide) | UF6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 30 V | 4.4A (Ta) | 4.5V, 10V | 25mOhm @ 2A, 10V | 2.5V @ 1mA | 12.4 nC @ 10 V | ±20V | 490 pF @ 15 V | - | 500mW (Ta) | ||||||||||||||||||||||||||
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2SA1955FVBTPL3Z | 0.1200 | ![]() |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | SOT-723 | 2SA1955 | 100 mW | VESM | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 8,000 | 12 V | 400 mA | 100nA (ICBO) | PNP | 250mV @ 10mA, 200mA | 300 @ 10mA, 2V | 130MHz | |||||||||||||||||||||||||||||||
CMS10I40A(TE12L,QM | 0.5800 | ![]() |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOD-128 | CMS10 | Schottky | M-FLAT (2.4x3.8) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 40 V | 450 mV @ 1 A | 100 µA @ 40 V | 150°C (Max) | 1A | 62pF @ 10V, 1MHz | ||||||||||||||||||||||||||||||||
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2SK3906(Q) | - | ![]() |
5343 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | 2SK3906 | MOSFET (Metal Oxide) | TO-3P(N) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 20A (Ta) | 10V | 330mOhm @ 10A, 10V | 4V @ 1mA | 60 nC @ 10 V | ±30V | 4250 pF @ 25 V | - | 150W (Tc) | |||||||||||||||||||||||||||
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1SS387,L3F | 0.2300 | ![]() |
107 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-79, SOD-523 | 1SS387 | Standard | ESC | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 8,000 | Small Signal =< 200mA (Io), Any Speed | 80 V | 1.2 V @ 100 mA | 4 ns | 500 nA @ 80 V | 125°C (Max) | 100mA | 0.5pF @ 0V, 1MHz | ||||||||||||||||||||||||||||||
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RN4905T5LFT | 0.1000 | ![]() |
1 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN4905 | 200mW | US6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100nA (ICBO) | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200MHz | 2.2kOhms | 47kOhms | ||||||||||||||||||||||||||||||
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2SK2744(F) | - | ![]() |
1975 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | 2SK2744 | MOSFET (Metal Oxide) | TO-3P(N) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 50 V | 45A (Ta) | 10V | 20mOhm @ 25A, 10V | 3.5V @ 1mA | 68 nC @ 10 V | ±20V | 2300 pF @ 10 V | - | 125W (Tc) | |||||||||||||||||||||||||||
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SSM6N62TU,LF | 0.4200 | ![]() |
12 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | SSM6N62 | MOSFET (Metal Oxide) | 500mW (Ta) | UF6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 2 N-Channel (Dual) | 20V | 800mA (Ta) | 85mOhm @ 800mA, 4.5V | 1V @ 1mA | 2nC @ 4.5V | 177pF @ 10V | Logic Level Gate, 1.2V Drive | ||||||||||||||||||||||||||||
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TK33S10N1L,LXHQ | 1.3200 | ![]() |
2353 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK33S10 | MOSFET (Metal Oxide) | DPAK+ | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 100 V | 33A (Ta) | 4.5V, 10V | 9.7mOhm @ 16.5A, 10V | 2.5V @ 500µA | 33 nC @ 10 V | ±20V | 2250 pF @ 10 V | - | 125W (Tc) | |||||||||||||||||||||||||||
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2SA1313-O(TE85L,F) | 0.0592 | ![]() |
6639 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Not For New Designs | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 2SA1313 | 200 mW | S-Mini | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 500 mA | 100nA (ICBO) | PNP | 250mV @ 10mA, 100mA | 70 @ 100mA, 1V | 200MHz | ||||||||||||||||||||||||||||||
CMZ24(TE12L,Q,M) | 0.5400 | ![]() |
8 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | ±10% | -40°C ~ 150°C (TJ) | Surface Mount | SOD-128 | CMZ24 | 2 W | M-FLAT (2.4x3.8) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0050 | 3,000 | 1.2 V @ 200 mA | 10 µA @ 17 V | 24 V | 30 Ohms | |||||||||||||||||||||||||||||||||
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TK55D10J1(Q) | - | ![]() |
9064 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 | TK55D10 | MOSFET (Metal Oxide) | TO-220(W) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 100 V | 55A (Ta) | 4.5V, 10V | 10.5mOhm @ 27A, 10V | 2.3V @ 1mA | 110 nC @ 10 V | ±20V | 5700 pF @ 10 V | - | 140W (Tc) |
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