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Discrete Semiconductor Products(2909)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Tolerance | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | Other Names | ECCN | HTSUS | Standard Package | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Voltage - Forward (Vf) (Max) @ If | Current - Reverse Leakage @ Vr | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Cutoff (Max) | Voltage - Zener (Nom) (Vz) | Impedance (Max) (Zzt) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
TK25S06N1L,LQ | 1.0300 |  |
5833 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK25S06 | MOSFET (Metal Oxide) | DPAK+ | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 60 V | 25A (Ta) | 4.5V, 10V | 18.5mOhm @ 12.5A, 10V | 2.5V @ 100µA | 15 nC @ 10 V | ±20V | 855 pF @ 10 V | - | 57W (Tc) | |||||||||||||||||
 |
TK10A60W5,S5VX | 2.0400 | |
32 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK10A60 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 9.7A (Ta) | 10V | 450mOhm @ 4.9A, 10V | 4.5V @ 500µA | 25 nC @ 10 V | ±30V | 720 pF @ 300 V | - | 30W (Tc) | |||||||||||||||||
 |
2SJ681(Q) | - | |
9057 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | 2SJ681 | MOSFET (Metal Oxide) | PW-MOLD2 | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 200 | P-Channel | 60 V | 5A (Ta) | 4V, 10V | 170mOhm @ 2.5A, 10V | 2V @ 1mA | 15 nC @ 10 V | ±20V | 700 pF @ 10 V | - | 20W (Ta) | ||||||||||||||||||
 |
RN1701,LF | 0.3000 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 5-TSSOP, SC-70-5, SOT-353 | RN1701 | 200mW | USV | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50V | 100mA | 500nA | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 30 @ 10mA, 5V | 250MHz | 4.7kOhms | 4.7kOhms | ||||||||||||||||||||
 |
RN2910FE,LF(CT | 0.2600 | |
4 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN2910 | 100mW | ES6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 100nA (ICBO) | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 200MHz | 4.7kOhms | - | ||||||||||||||||||||
 |
RN1902T5LFT | - | |
4506 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN1902 | 200mW | US6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 100mA | 100nA (ICBO) | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 250MHz | 10kOhms | 10kOhms | ||||||||||||||||||||
 |
TPCC8001-H(TE12LQM | - | |
4160 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSV-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | TPCC8001 | MOSFET (Metal Oxide) | 8-TSON Advance (3.3x3.3) | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 22A (Ta) | 4.5V, 10V | 8.3mOhm @ 11A, 10V | 2.5V @ 1mA | 27 nC @ 10 V | ±20V | 2500 pF @ 10 V | - | 700mW (Ta), 30W (Tc) | ||||||||||||||||||
|
TK4P60DA(T6RSS-Q) | - | |
2953 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TK4P60 | MOSFET (Metal Oxide) | D-Pak | download | RoHS Compliant | 1 (Unlimited) | TK4P60DAT6RSSQ | EAR99 | 8541.29.0095 | 2,000 | N-Channel | 600 V | 3.5A (Ta) | 10V | 2.2Ohm @ 1.8A, 10V | 4.4V @ 1mA | 11 nC @ 10 V | ±30V | 490 pF @ 25 V | - | 80W (Tc) | ||||||||||||||||
|
RN4981FE,LF(CT | 0.2600 | |
4 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN4981 | 100mW | ES6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 500nA | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 30 @ 10mA, 5V | 250MHz, 200MHz | 4.7kOhms | 4.7kOhms | ||||||||||||||||||||
 |
SSM3K16FU,LF | 0.3000 | |
23 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVI | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | SC-70, SOT-323 | SSM3K16 | MOSFET (Metal Oxide) | USM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 20 V | 100mA (Ta) | 1.5V, 4V | 3Ohm @ 10mA, 4V | 1.1V @ 100µA | ±10V | 9.3 pF @ 3 V | - | 150mW (Ta) | ||||||||||||||||||
 |
TK40E10K3,S1X(S | - | |
9070 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIV | Tube | Obsolete | - | Through Hole | TO-220-3 | TK40E10 | MOSFET (Metal Oxide) | TO-220-3 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 100 V | 40A (Ta) | 15mOhm @ 20A, 10V | 4V @ 1mA | 84 nC @ 10 V | 4000 pF @ 10 V | - | - | |||||||||||||||||||
|
TPCA8057-H,LQ(M | - | |
1274 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPCA8057 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 42A (Ta) | 4.5V, 10V | 2.6mOhm @ 21A, 10V | 2.3V @ 500µA | 61 nC @ 10 V | ±20V | 5200 pF @ 10 V | - | 1.6W (Ta), 57W (Tc) | |||||||||||||||||
 |
TK42E12N1,S1X | 1.3700 | |
5104 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 | TK42E12 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | TK42E12N1S1X | EAR99 | 8541.29.0095 | 50 | N-Channel | 120 V | 88A (Tc) | 10V | 9.4mOhm @ 21A, 10V | 4V @ 1mA | 52 nC @ 10 V | ±20V | 3100 pF @ 60 V | - | 140W (Tc) | ||||||||||||||||
 |
2SA1182-Y,LF | 0.3300 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 2SA1182 | 150 mW | S-Mini | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 30 V | 500 mA | 100nA (ICBO) | PNP | 250mV @ 10mA, 100mA | 120 @ 100mA, 1V | 200MHz | |||||||||||||||||||||
|
RN1423TE85LF | 0.4200 | |
5 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN1423 | 200 mW | S-Mini | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 800 mA | 500nA | NPN - Pre-Biased | 250mV @ 1mA, 50mA | 70 @ 100mA, 1V | 300 MHz | 4.7 kOhms | 4.7 kOhms | ||||||||||||||||||||
 |
SSM6J414TU,LF | 0.4900 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | SSM6J414 | MOSFET (Metal Oxide) | UF6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 20 V | 6A (Ta) | 1.5V, 4.5V | 22.5mOhm @ 6A, 4.5V | 1V @ 1mA | 23.1 nC @ 4.5 V | ±8V | 1650 pF @ 10 V | - | 1W (Ta) | |||||||||||||||||
 |
SSM3K361R,LF | 0.5100 | |
128 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | SOT-23-3 Flat Leads | SSM3K361 | MOSFET (Metal Oxide) | SOT-23F | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 100 V | 3.5A (Ta) | 4.5V, 10V | 69mOhm @ 2A, 10V | 2.5V @ 100µA | 3.2 nC @ 4.5 V | ±20V | 430 pF @ 15 V | - | 1.2W (Ta) | |||||||||||||||||
 |
RN2110MFV,L3F | 0.2000 | |
8 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-723 | RN2110 | 150 mW | VESM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 8,000 | 50 V | 100 mA | 100nA (ICBO) | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 4.7 kOhms | ||||||||||||||||||||||
 |
2SA2056(TE85L,F) | 0.1275 | |
9013 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 2SA2056 | 625 mW | TSM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 2 A | 100nA (ICBO) | PNP | 200mV @ 33mA, 1A | 200 @ 300mA, 2V | - | |||||||||||||||||||||
 |
RN1118(TE85L,F) | 0.3900 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-75, SOT-416 | RN1118 | 100 mW | SSM | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 250 MHz | 47 kOhms | 10 kOhms | |||||||||||||||||||||
 |
RN2102CT(TPL3) | - | |
9019 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SC-101, SOT-883 | RN2102 | 50 mW | CST3 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 10,000 | 20 V | 50 mA | 500nA | PNP - Pre-Biased | 150mV @ 250µA, 5mA | 60 @ 10mA, 5V | 10 kOhms | 10 kOhms | ||||||||||||||||||||||
 |
2SA1931,NETQ(M | - | |
6462 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SA1931 | 2 W | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0075 | 1 | 50 V | 5 A | 1µA (ICBO) | PNP | 400mV @ 200mA, 2A | 100 @ 1A, 1V | 60MHz | ||||||||||||||||||||||
 |
2SC2655-Y,T6WNLF(J | - | |
2036 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC2655 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 50 V | 2 A | 1µA (ICBO) | NPN | 500mV @ 50mA, 1A | 70 @ 500mA, 2V | 100MHz | ||||||||||||||||||||||
|
RN2705,LF | 0.3000 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 5-TSSOP, SC-70-5, SOT-353 | RN2705 | 200mW | USV | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50V | 100mA | 500nA | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200MHz | 2.2kOhms | 47kOhms | ||||||||||||||||||||
|
TTC1949-Y,LF | 0.3100 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TTC1949 | 200 mW | S-Mini | download | RoHS non-compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 500 mA | 100nA (ICBO) | NPN | 400mV @ 50mA, 500mA | 120 @ 100mA, 1V | 100MHz | |||||||||||||||||||||
|
TK31E60X,S1X | 5.6700 | |
40 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV-H | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 | TK31E60 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 30.8A (Ta) | 10V | 88mOhm @ 9.4A, 10V | 3.5V @ 1.5mA | 65 nC @ 10 V | ±30V | 3000 pF @ 300 V | - | 230W (Tc) | |||||||||||||||||
 |
TPCA8026(TE12L,Q,M | 1.8800 | |
1 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIV | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPCA8026 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 45A (Ta) | 4.5V, 10V | 2.2mOhm @ 23A, 10V | 2.5V @ 1mA | 113 nC @ 10 V | ±20V | 4200 pF @ 10 V | - | 1.6W (Ta), 45W (Tc) | |||||||||||||||||
 |
CRZ22(TE85L,Q) | - | |
5653 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | ±10% | -40°C ~ 150°C | Surface Mount | SOD-123F | CRZ22 | 700 mW | S-FLAT (1.6x3.5) | download | 1 (Unlimited) | CRZ22TR-NDR | EAR99 | 8541.10.0050 | 3,000 | 1 V @ 200 mA | 10 µA @ 16 V | 22 V | 30 Ohms | |||||||||||||||||||||||
|
TK56E12N1,S1X | 1.6800 | |
7085 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 | TK56E12 | MOSFET (Metal Oxide) | TO-220 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 120 V | 56A (Ta) | 10V | 7mOhm @ 28A, 10V | 4V @ 1mA | 69 nC @ 10 V | ±20V | 4200 pF @ 60 V | - | 168W (Tc) | |||||||||||||||||
 |
SSM6J424TU,LF | 0.4700 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | 6-SMD, Flat Leads | SSM6J424 | MOSFET (Metal Oxide) | UF6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | P-Channel | 20 V | 6A (Ta) | 1.5V, 4.5V | 22.5mOhm @ 6A, 4.5V | 1V @ 1mA | 23.1 nC @ 4.5 V | +6V, -8V | 1650 pF @ 10 V | - | 1W (Ta) |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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