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Discrete Semiconductor Products(2909)
| Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Operating Temperature | Mounting Type | Package / Case | Base Product Number | Input Type | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | ECCN | HTSUS | Standard Package | FET Type | Test Condition | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Reverse Recovery Time (trr) | IGBT Type | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Current - Collector Pulsed (Icm) | Vce(on) (Max) @ Vge, Ic | Switching Energy | Td (on/off) @ 25°C | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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HN4K03JUTE85LF | - |  |
2107 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 5-TSSOP, SC-70-5, SOT-353 | HN4K03 | MOSFET (Metal Oxide) | 5-SSOP | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 20 V | 100mA (Ta) | 2.5V | 12Ohm @ 10mA, 2.5V | - | 10V | 8.5 pF @ 3 V | - | 200mW (Ta) | |||||||||||||||||||||
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RN1701,LF | 0.3000 | |
6 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 5-TSSOP, SC-70-5, SOT-353 | RN1701 | 200mW | USV | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50V | 100mA | 500nA | 2 NPN - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 30 @ 10mA, 5V | 250MHz | 4.7kOhms | 4.7kOhms | ||||||||||||||||||||||
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RN2910FE,LF(CT | 0.2600 | |
4 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN2910 | 100mW | ES6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 100nA (ICBO) | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 200MHz | 4.7kOhms | - | ||||||||||||||||||||||
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2SJ681(Q) | - | |
9057 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | 2SJ681 | MOSFET (Metal Oxide) | PW-MOLD2 | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 200 | P-Channel | 60 V | 5A (Ta) | 4V, 10V | 170mOhm @ 2.5A, 10V | 2V @ 1mA | 15 nC @ 10 V | ±20V | 700 pF @ 10 V | - | 20W (Ta) | ||||||||||||||||||||
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TK65G10N1,RQ | - | |
7711 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TK65G10 | MOSFET (Metal Oxide) | D2PAK | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 100 V | 65A (Ta) | 10V | 4.5mOhm @ 32.5A, 10V | 4V @ 1mA | 81 nC @ 10 V | ±20V | 5400 pF @ 50 V | - | 156W (Tc) | |||||||||||||||||||
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2SC5242-O(Q) | 2.9300 | |
441 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tray | Active | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | 2SC5242 | 130 W | TO-3P(N) | download | RoHS Compliant | Not Applicable | EAR99 | 8541.29.0075 | 100 | 230 V | 15 A | 5µA (ICBO) | NPN | 3V @ 800mA, 8A | 80 @ 1A, 5V | 30MHz | |||||||||||||||||||||||
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SSM3K7002KF,LF | 0.3300 | |
31 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVII-H | Tape & Reel (TR) | Active | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SSM3K7002 | MOSFET (Metal Oxide) | S-Mini | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 60 V | 400mA (Ta) | 4.5V, 10V | 1.5Ohm @ 100mA, 10V | 2.1V @ 250µA | 0.6 nC @ 4.5 V | ±20V | 40 pF @ 10 V | - | 270mW (Ta) | |||||||||||||||||||
|
2SK4021(Q) | - | |
5729 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | 2SK4021 | MOSFET (Metal Oxide) | PW-MOLD2 | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 200 | N-Channel | 250 V | 4.5A (Ta) | 10V | 1Ohm @ 2.5A, 10V | 3.5V @ 1mA | 10 nC @ 10 V | ±20V | 440 pF @ 10 V | - | 20W (Tc) | ||||||||||||||||||||
 |
TK10A80E,S4X | 2.4200 | |
117 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVIII | Tube | Active | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK10A80 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | Not Applicable | EAR99 | 8541.29.0095 | 50 | N-Channel | 800 V | 10A (Ta) | 10V | 1Ohm @ 5A, 10V | 4V @ 1mA | 46 nC @ 10 V | ±30V | 2000 pF @ 25 V | - | 50W (Tc) | |||||||||||||||||||
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2SC5171,Q(J | - | |
7250 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SC5171 | 2 W | TO-220NIS | download | 1 (Unlimited) | EAR99 | 8541.29.0075 | 1 | 180 V | 2 A | 5µA (ICBO) | NPN | 1V @ 100mA, 1A | 100 @ 100mA, 5V | 200MHz | ||||||||||||||||||||||||
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SSM3J134TU,LF | 0.4100 | |
2 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C | Surface Mount | 3-SMD, Flat Leads | SSM3J134 | MOSFET (Metal Oxide) | UFM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | P-Channel | 20 V | 3.2A (Ta) | 1.5V, 4.5V | 93mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.7 nC @ 4.5 V | ±8V | 290 pF @ 10 V | - | 500mW (Ta) | |||||||||||||||||||
 |
TW027Z65C,S1F | 20.2700 | |
120 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C | Through Hole | TO-247-4 | SiC (Silicon Carbide Junction Transistor) | TO-247-4L(X) | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 650 V | 58A (Tc) | 18V | 38mOhm @ 29A, 18V | 5V @ 3mA | 65 nC @ 18 V | +25V, -10V | 2288 pF @ 400 V | - | 156W (Tc) | ||||||||||||||||||||
|
TDTC143E,LM | 0.1800 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TDTC143 | 320 mW | SOT-23-3 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 500µA, 10mA | 30 @ 10mA, 5V | 250 MHz | 4.7 kOhms | |||||||||||||||||||||||
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2SA2215,LF | 0.5000 | |
4593 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | 2SA2215 | 500 mW | UFM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 20 V | 2.5 A | 100nA (ICBO) | PNP | 190mV @ 53mA, 1.6A | 200 @ 500mA, 2V | - | |||||||||||||||||||||||
|
RN4990FE,LF(CT | 0.2600 | |
6683 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN4990 | 100mW | ES6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 100nA (ICBO) | 1 NPN, 1 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 250MHz, 200MHz | 4.7kOhms | - | ||||||||||||||||||||||
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TJ40S04M3L(T6L1,NQ | 1.7200 | |
1939 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TJ40S04 | MOSFET (Metal Oxide) | DPAK+ | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,000 | P-Channel | 40 V | 40A (Ta) | 6V, 10V | 9.1mOhm @ 20A, 10V | 3V @ 1mA | 83 nC @ 10 V | +10V, -20V | 4140 pF @ 10 V | - | 68W (Tc) | |||||||||||||||||||
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TPCA8051-H(T2L1,VM | - | |
9874 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI-H | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPCA8051 | MOSFET (Metal Oxide) | 8-SOP Advance (5x5) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 5,000 | N-Channel | 80 V | 28A (Ta) | 4.5V, 10V | 9.4mOhm @ 14A, 10V | 2.3V @ 1mA | 91 nC @ 10 V | ±20V | 7540 pF @ 10 V | - | 1.6W (Ta), 45W (Tc) | |||||||||||||||||||
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GT60N321(Q) | - | |
5273 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Obsolete | 150°C (TJ) | Through Hole | TO-3PL | GT60N321 | Standard | 170 W | TO-3P(LH) | - | 1 (Unlimited) | EAR99 | 8541.29.0095 | 100 | - | 2.5 µs | - | 1000 V | 60 A | 120 A | 2.8V @ 15V, 60A | - | 330ns/700ns | |||||||||||||||||||||
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HN1C01FYTE85LF | 0.3300 | |
3827 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | SC-74, SOT-457 | HN1C01 | 300mW | SM6 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 150mA | 100nA (ICBO) | 2 NPN (Dual) | 250mV @ 10mA, 100mA | 120 @ 2mA, 6V | 80MHz | |||||||||||||||||||||||
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2SA1680,T6F(J | - | |
4464 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SA1680 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 50 V | 2 A | 1µA (ICBO) | PNP | 500mV @ 50mA, 1A | 120 @ 100mA, 2V | 100MHz | ||||||||||||||||||||||||
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RN1109,LF(CT | 0.2000 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-75, SOT-416 | RN1109 | 100 mW | SSM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 100nA (ICBO) | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 70 @ 10mA, 5V | 250 MHz | 47 kOhms | 22 kOhms | ||||||||||||||||||||||
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2SC2229-Y,F(J | - | |
5348 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC2229 | 800 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 150 V | 50 mA | 100nA (ICBO) | NPN | 500mV @ 1mA, 10mA | 70 @ 10mA, 5V | 120MHz | ||||||||||||||||||||||||
|
RN2962FE(TE85L,F) | - | |
8234 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SOT-563, SOT-666 | RN2962 | 100mW | ES6 | - | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 100nA (ICBO) | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 200MHz | 10kOhms | 1kOhms | |||||||||||||||||||||||
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ULN2803APG,CN | - | |
1735 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Obsolete | -40°C ~ 85°C (TA) | Through Hole | 18-DIP (0.300", 7.62mm) | ULN2803 | 1.47W | 18-DIP | download | 1 (Unlimited) | EAR99 | 8541.29.0075 | 800 | 50V | 500mA | - | 8 NPN Darlington | 1.6V @ 500µA, 350mA | 1000 @ 350mA, 2V | - | ||||||||||||||||||||||||
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RN2421(TE85L,F) | 0.0906 | |
3541 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Not For New Designs | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN2421 | 200 mW | S-Mini | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 800 mA | 500nA | PNP - Pre-Biased | 250mV @ 2mA, 50mA | 60 @ 100mA, 1V | 200 MHz | 1 kOhms | 1 kOhms | ||||||||||||||||||||||
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TK62J60W,S1VQ | 16.3700 | |
20 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TK62J60 | MOSFET (Metal Oxide) | TO-3P(N) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 25 | N-Channel | 600 V | 61.8A (Ta) | 10V | 38mOhm @ 30.9A, 10V | 3.7V @ 3.1mA | 180 nC @ 10 V | ±30V | 6500 pF @ 300 V | - | 400W (Tc) | |||||||||||||||||||
 |
2SA1428-Y,T2F(J | - | |
9599 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | SC-71 | 2SA1428 | 900 mW | MSTM | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 50 V | 2 A | 1µA (ICBO) | PNP | 500mV @ 50mA, 1A | 70 @ 500mA, 2V | 100MHz | ||||||||||||||||||||||||
 |
RN2107CT(TPL3) | - | |
2801 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SC-101, SOT-883 | RN2107 | 50 mW | CST3 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 10,000 | 20 V | 50 mA | 500nA | PNP - Pre-Biased | 150mV @ 250µA, 5mA | 120 @ 10mA, 5V | 10 kOhms | 47 kOhms | ||||||||||||||||||||||||
|
RN1412TE85LF | 0.3000 | |
1 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN1412 | 200 mW | S-Mini | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 100nA (ICBO) | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 250 MHz | 22 kOhms | |||||||||||||||||||||||
 |
RN2310,LF | 0.1700 | |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SC-70, SOT-323 | RN2310 | 100 mW | SC-70 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50 V | 100 mA | 100nA (ICBO) | PNP - Pre-Biased | 300mV @ 250µA, 5mA | 120 @ 1mA, 5V | 200 MHz | 4.7 kOhms |
2000+
Daily average RFQ Volume
30,000,000
Standard Product Unit
2800+
Worldwide Manufacturers
15,000 m2
In-stock Warehouse
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