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Email: sales@sic-components.com
Image | Product Number | Pricing(USD) | Quantity | ECAD | Quantity Available | Weight(Kg) | Mfr | Series | Package | Product Status | Voltage - Rated | Operating Temperature | Applications | Mounting Type | Package / Case | Base Product Number | Technology | Power - Max | Supplier Device Package | DataSheet | RoHS Status | Moisture Sensitivity Level (MSL) | REACH Status | Other Names | ECCN | HTSUS | Standard Package | Configuration | Speed | FET Type | Current Rating (Amps) | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Diode Configuration | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Current - Average Rectified (Io) | Capacitance @ Vr, F | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) | Voltage - Breakdown (V(BR)GSS) | Current - Drain (Idss) @ Vds (Vgs=0) | Voltage - Cutoff (VGS off) @ Id | Current - Collector Cutoff (Max) | Transistor Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce | Frequency - Transition | Resistor - Base (R1) | Resistor - Emitter Base (R2) | Current Drain (Id) - Max |
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TPN8R903NL,LQ | 0.7400 | ![]() |
8 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVIII-H | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-PowerVDFN | TPN8R903 | MOSFET (Metal Oxide) | 8-TSON Advance (3.1x3.1) | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 3,000 | N-Channel | 30 V | 20A (Tc) | 4.5V, 10V | 8.9mOhm @ 10A, 10V | 2.3V @ 100µA | 9.8 nC @ 4.5 V | ±20V | 820 pF @ 15 V | - | 700mW (Ta), 22W (Tc) | |||||||||||||||||||||||||||||||
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CUHS15S30,H3F | 0.3700 | ![]() |
50 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 2-SMD, Flat Lead | CUHS15 | Schottky | US2H | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 30 V | 430 mV @ 1.5 A | 500 µA @ 30 V | 150°C | 1.5A | 200pF @ 0V, 1MHz | ||||||||||||||||||||||||||||||||||||
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TK8R2A06PL,S4X | 1.0200 | ![]() |
1381 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tube | Active | 175°C (TJ) | Through Hole | TO-220-3 Full Pack | TK8R2A06 | MOSFET (Metal Oxide) | TO-220SIS | download | ROHS3 Compliant | Not Applicable | EAR99 | 8541.29.0095 | 50 | N-Channel | 60 V | 50A (Tc) | 4.5V, 10V | 11.4mOhm @ 8A, 4.5V | 2.5V @ 300µA | 28.4 nC @ 10 V | ±20V | 1990 pF @ 25 V | - | 36W (Tc) | |||||||||||||||||||||||||||||||
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RN2906FE,LXHF(CT | 0.3800 | ![]() |
7 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | SOT-563, SOT-666 | RN2906 | 100mW | ES6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 100mA | 500nA | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200MHz | 4.7kOhms | 47kOhms | |||||||||||||||||||||||||||||||||||
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2SK4016(Q) | - | ![]() |
1323 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | 2SK4016 | MOSFET (Metal Oxide) | TO-220SIS | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 50 | N-Channel | 600 V | 13A (Ta) | 10V | 500mOhm @ 6.5A, 10V | 4V @ 1mA | 62 nC @ 10 V | ±30V | 3100 pF @ 25 V | - | 50W (Tc) | ||||||||||||||||||||||||||||||||
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TBAT54S,LM | 0.2100 | ![]() |
95 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TBAT54 | Schottky | SOT-23-3 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Small Signal =< 200mA (Io), Any Speed | 1 Pair Series Connection | 30 V | 200mA | 580 mV @ 100 mA | 1.5 ns | 2 µA @ 25 V | -55°C ~ 150°C | |||||||||||||||||||||||||||||||||||
TK1R5R04PB,LXGQ | 2.6900 | ![]() |
2158 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TK1R5R04 | MOSFET (Metal Oxide) | D2PAK+ | download | 3 (168 Hours) | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 40 V | 160A (Ta) | 6V, 10V | 1.5mOhm @ 80A, 10V | 3V @ 500µA | 103 nC @ 10 V | ±20V | 5500 pF @ 10 V | - | 205W (Tc) | |||||||||||||||||||||||||||||||||
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RN1116MFV,L3F | 0.1800 | ![]() |
8 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | SOT-723 | RN1116 | 150 mW | VESM | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 8,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 250 MHz | 4.7 kOhms | 10 kOhms | ||||||||||||||||||||||||||||||||||
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TK13A60D(STA4,Q,M) | - | ![]() |
6841 | 0.00000000 | Toshiba Semiconductor and Storage | π-MOSVII | Tube | Obsolete | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TK13A60 | MOSFET (Metal Oxide) | TO-220SIS | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | N-Channel | 600 V | 13A (Ta) | 10V | 430mOhm @ 6.5A, 10V | 4V @ 1mA | 40 nC @ 10 V | ±30V | 2300 pF @ 25 V | - | 50W (Tc) | |||||||||||||||||||||||||||||||
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SSM6N36FE,LM | 0.4300 | ![]() |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | SSM6N36 | MOSFET (Metal Oxide) | 150mW | ES6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 2 N-Channel (Dual) | 20V | 500mA | 630mOhm @ 200mA, 5V | 1V @ 1mA | 1.23nC @ 4V | 46pF @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||
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HN1D01FU,LF(T | 0.4600 | ![]() |
137 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | HN1D01 | Standard | US6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.10.0070 | 3,000 | Small Signal =< 200mA (Io), Any Speed | 2 Pair Common Anode | 80 V | 100mA | 1.2 V @ 100 mA | 4 ns | 500 nA @ 80 V | 125°C (Max) | |||||||||||||||||||||||||||||||||||
CRF03(TE85L,Q,M) | - | ![]() |
5105 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | Surface Mount | SOD-123F | CRF03 | Standard | S-FLAT (1.6x3.5) | - | ROHS3 Compliant | 1 (Unlimited) | REACH Unaffected | EAR99 | 8541.10.0080 | 3,000 | Fast Recovery =< 500ns, > 200mA (Io) | 600 V | 2 V @ 700 mA | 100 ns | 50 µA @ 600 V | -40°C ~ 150°C | 700mA | - | |||||||||||||||||||||||||||||||||||
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TPC8129,LQ(S | 0.5600 | ![]() |
2 | 0.00000000 | Toshiba Semiconductor and Storage | U-MOSVI | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | TPC8129 | MOSFET (Metal Oxide) | 8-SOP | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 2,500 | P-Channel | 30 V | 9A (Ta) | 4.5V, 10V | 22mOhm @ 4.5A, 10V | 2V @ 200µA | 39 nC @ 10 V | +20V, -25V | 1650 pF @ 10 V | - | 1W (Ta) | |||||||||||||||||||||||||||||||
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TW048Z65C,S1F | 14.4200 | ![]() |
120 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tube | Active | 175°C | Through Hole | TO-247-4 | SiC (Silicon Carbide Junction Transistor) | TO-247-4L(X) | - | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 30 | N-Channel | 650 V | 40A (Tc) | 18V | 69mOhm @ 20A, 18V | 5V @ 1.6mA | 41 nC @ 18 V | +25V, -10V | 1362 pF @ 400 V | - | 132W (Tc) | ||||||||||||||||||||||||||||||||
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2SA1020-O,F(J | - | ![]() |
1486 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SA1020 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 50 V | 2 A | 1µA (ICBO) | PNP | 500mV @ 50mA, 1A | 70 @ 500mA, 2V | 100MHz | ||||||||||||||||||||||||||||||||||||
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2SK209-GR(TE85L,F) | 0.4700 | ![]() |
6 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 2SK209 | 150 mW | SC-59 | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | N-Channel | 13pF @ 10V | 50 V | 14 mA @ 10 V | 1.5 V @ 100 nA | 14 mA | ||||||||||||||||||||||||||||||||||||
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XPQR3004PB,LXHQ | 6.7900 | ![]() |
2 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101, U-MOSIX-H | Tape & Reel (TR) | Active | 175°C | Surface Mount | 8-PowerBSFN | XPQR3004 | MOSFET (Metal Oxide) | L-TOGL™ | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1,500 | N-Channel | 40 V | 400A (Ta) | 6V, 10V | 0.3mOhm @ 200A, 10V | 3V @ 1mA | 295 nC @ 10 V | ±20V | 26910 pF @ 10 V | - | 750W (Tc) | |||||||||||||||||||||||||||||||
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2SC3265-Y,LF | 0.4400 | ![]() |
1 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 2SC3265 | 200 mW | TO-236 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 25 V | 800 mA | 100nA (ICBO) | NPN | 400mV @ 20mA, 500mA | 160 @ 100mA, 1V | 120MHz | |||||||||||||||||||||||||||||||||||
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2SA1618-Y(TE85L,F) | 0.4700 | ![]() |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 125°C (TJ) | Surface Mount | SC-74A, SOT-753 | 2SA1618 | 300mW | SMV | download | RoHS Compliant | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50V | 150mA | 100nA (ICBO) | 2 PNP (Dual) Matched Pair, Common Emitter | 300mV @ 10mA, 100mA | 120 @ 2mA, 6V | 80MHz | |||||||||||||||||||||||||||||||||||
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RN2908,LF(CT | 0.2700 | ![]() |
3 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | Surface Mount | 6-TSSOP, SC-88, SOT-363 | RN2908 | 200mW | US6 | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 50V | 100mA | 500nA | 2 PNP - Pre-Biased (Dual) | 300mV @ 250µA, 5mA | 80 @ 10mA, 5V | 200MHz | 22kOhms | 47kOhms | ||||||||||||||||||||||||||||||||||
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HN2C01FE-GR(T5L,F) | - | ![]() |
1551 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | SOT-563, SOT-666 | HN2C01 | 100mW | ES6 | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 4,000 | 50V | 150mA | 100nA (ICBO) | 2 NPN (Dual) | 250mV @ 10mA, 100mA | 200 @ 2mA, 6V | 60MHz | ||||||||||||||||||||||||||||||||||||
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2SA949-Y(T6SHRP,FM | - | ![]() |
5283 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SA949 | 800 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 150 V | 50 mA | 100nA (ICBO) | PNP | 800mV @ 1mA, 10A | 70 @ 10mA, 5V | 120MHz | ||||||||||||||||||||||||||||||||||||
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2SA1298-Y,LF | 0.4200 | ![]() |
2 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Active | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 2SA1298 | 200 mW | S-Mini | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.21.0075 | 3,000 | 25 V | 800 mA | 100nA (ICBO) | PNP | 400mV @ 20mA, 500mA | 160 @ 100mA, 1V | 120MHz | |||||||||||||||||||||||||||||||||||
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2SK2993(TE24L,Q) | - | ![]() |
9210 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2SK2993 | MOSFET (Metal Oxide) | TO-220SM | download | 1 (Unlimited) | EAR99 | 8541.29.0095 | 1,000 | N-Channel | 250 V | 20A (Ta) | 10V | 105mOhm @ 10A, 10V | 3.5V @ 1mA | 100 nC @ 10 V | ±20V | 4000 pF @ 10 V | - | 100W (Tc) | ||||||||||||||||||||||||||||||||
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2SC2229-O(T6MIT1FM | - | ![]() |
3344 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC2229 | 800 mW | TO-92MOD | download | 1 (Unlimited) | 2SC2229OT6MIT1FM | EAR99 | 8541.21.0075 | 1 | 150 V | 50 mA | 100nA (ICBO) | NPN | 500mV @ 1mA, 10mA | 70 @ 10mA, 5V | 120MHz | |||||||||||||||||||||||||||||||||||
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2SC6142(Q) | - | ![]() |
2783 | 0.00000000 | Toshiba Semiconductor and Storage | - | Box | Active | 150°C (TJ) | Through Hole | TO-251-3 Stub Leads, IPak | 1.1 W | PW-MOLD2 | download | 264-2SC6142(Q) | EAR99 | 8541.29.0095 | 1 | 375 V | 1.5 A | 50µA (ICBO) | NPN | 900mV @ 100mA, 800mA | 100 @ 100mA, 5V | - | |||||||||||||||||||||||||||||||||||||
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RN1415,LXHF | 0.3400 | ![]() |
6 | 0.00000000 | Toshiba Semiconductor and Storage | Automotive, AEC-Q101 | Tape & Reel (TR) | Active | Surface Mount | TO-236-3, SC-59, SOT-23-3 | RN1415 | 200 mW | S-Mini | download | 1 (Unlimited) | EAR99 | 8541.21.0095 | 3,000 | 50 V | 100 mA | 500nA | NPN - Pre-Biased | 300mV @ 250µA, 5mA | 50 @ 10mA, 5V | 250 MHz | 2.2 kOhms | 10 kOhms | |||||||||||||||||||||||||||||||||||
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TPCP8F01(TE85L,F,M | - | ![]() |
3838 | 0.00000000 | Toshiba Semiconductor and Storage | - | Tape & Reel (TR) | Obsolete | 20V | Load Switch | Surface Mount | 8-SMD, Flat Lead | TPCP8 | PS-8 | download | RoHS Compliant | TPCP8F01(TE85LFM | EAR99 | 8541.21.0095 | 3,000 | 3A | PNP, N-Channel | ||||||||||||||||||||||||||||||||||||||||
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TK31J60W,S1VQ | 9.3800 | ![]() |
15 | 0.00000000 | Toshiba Semiconductor and Storage | DTMOSIV | Tube | Active | 150°C (TJ) | Through Hole | TO-3P-3, SC-65-3 | TK31J60 | MOSFET (Metal Oxide) | TO-3P(N) | download | ROHS3 Compliant | 1 (Unlimited) | EAR99 | 8541.29.0095 | 25 | N-Channel | 600 V | 30.8A (Ta) | 10V | 88mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 86 nC @ 10 V | ±30V | 3000 pF @ 300 V | - | 230W (Tc) | |||||||||||||||||||||||||||||||
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2SC2655-Y(T6ND1,AF | - | ![]() |
5882 | 0.00000000 | Toshiba Semiconductor and Storage | - | Bulk | Obsolete | 150°C (TJ) | Through Hole | TO-226-3, TO-92-3 Long Body | 2SC2655 | 900 mW | TO-92MOD | download | 1 (Unlimited) | EAR99 | 8541.21.0075 | 1 | 50 V | 2 A | 1µA (ICBO) | NPN | 500mV @ 50mA, 1A | 70 @ 500mA, 2V | 100MHz |
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